C.N.Koumelis,G.E.Zardas,C.A.Londos
and D.K.Leventouri, "Internal strain of GaAs.II Transverse case". Acta
Crystall.A32,306 (1976). pdf
2) C.A.Londos and C.N.Koumelis, "An anomaly of the X-Ray spectrum of
graphite in the region of the Raman band". Sol.Stat Commun. 31,735 (1979). pdf
3) C.N.Koumelis and C.A.Londos, "X-Ray Raman scattering in colloidal and
polycrystalline graphite". Can.J.Phys.58,1507
(1980). pdf
4) C.N.Koumelis,C.A.Londos, Z.I.Kavogli, D.K.Leventouri, A.B.Vassilikou and
G.E.Zardas, "On a mosaic graphite spectometer without collimators". Can.J.Phys.60,1241 (1982). pdf
5) A.N.Andriotis and C.A.Londos, "Angular dependence of the X-Ray Raman
Scattering from polycrystals". Sol.Stat.Commun.49,213
(1983). pdf
6) C.A.Londos, "Room temperature irradiation of p-type silicon". phys.stat.sol.(a) 92,609 (1985). pdf
7) A.B.Vassilikou,J.G.Grammatikakis and C.A.Londos, "Thermally stimulated
depolarization currents in LiF+Be2+" J.Phys.Chem.Sol.47, 727 (1986).
pdf
8) C.A.Londos, "Electron irradiation-induced defects in p-type
Silicon", J.Phys. Chem. Sol. 47, 1147 (1986). pdf
9) C.A.Londos,"Charge-dependent defect traces in the DLTS and MCTS spectra
of Silicon" phys.stat.sol.(a)96,637 (1986). pdf
10) C.A.Londos, "Capacitance transient studies of a metastable defect in
Silicon" Phys.Rev.B34,1310 (1986). pdf
11) C.A.Londos and P.C.Banbury, "Defect studies in electron irradiated
boron-doped Silicon" J.Phys.C20,645 (1987). pdf
12) C.A.Londos, "An anomalous feature on the DLTS spectrum of
Silicon" Sol.Stat.Commun.62,719 (1987). pdf
13) C.A.Londos Deep-Level transient spectroscopy studies of the interstitial
carbon defect in Silicon" Phys.Rev.B35,6295 (1987). pdf
14) C.A.Londos, "The divacancy production in low-temperature irradiated
Silicon" Phys.Rev.B35,7511 (1987). pdf
15) C.A.Londos, "Annealing studies of defects pertinent to radiation
damage in Si:B" phys.stat.sol.(a)102,639 (1987). pdf
16) C.A.Londos, "The effect of Oxygen on the migration of the Carbon
interstitial defect in Silicon" Phys.Rev.B37,4175 (1988). pdf
17) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and A.Martens, "Correlation
of the concentration of the carbon associated damage levels with the total
carbon concentration in Silicon", J.Appl.Phys.63,183 (1988). pdf
18) V.Hadjicontis,C.A.Londos and K.Eftaxias, "Correlation of the
diffusivities of various elements in Silicon", phys.stat.sol.(a)105,K87
(1988). pdf
19) C.A.Londos, "Some aspects on defects reactions related to the carbon
impurity in Silicon" Jap.J.Appl.Phys.27,2089 (1988). pdf
20) C.A.Londos and J.Grammatikakis, "Notes on the carbon-associated deep
level complex in irradiated Si", phys.stat.sol.(a)109,421 (1988). pdf
21) J.Grammatikakis and C.A.Londos, "Compressibilities of Niobium
alloys" J.Phys.Chem.Sol.49,1465 (1988). pdf
22) C.A.Londos, "Defect states in electron-bombarded n-type Silicon" phys.stat.sol.(a)113,503
(1989). pdf
23) J.Grammatikakis,C.A.Londos,V.Katsika and N.Bogris, "Migration enthalpy
of the cation vacancies in LiF+Be2+", J.Phys.Chem.Sol. 50,845 (1989). pdf
24) K.Eftaxias,C.A.Londos and Ph.Valianatos, "An alternative treatment of
the problem of the image formation of an object through plain interfaces",
Am.J.Phys.58,771 (1990). pdf
25) C.A.Londos,K.Eftaxias and V.Hadjicontis, "Correlation of Solubities of
various elements in Silicon", phys.stat.sol.(a)118,K13 (1990). pdf
26) C.A.Londos, "Carbon-related radiation damage centers and processes in
p-type Silicon" Semicond.Sci.Technol.5,645 (1990). pdf
27) C.A.Londos, "Charge-state-controlled behaviour of the interstitial
carbon defects in Czochralski-grown Silicon", J.Phys.Chem.Sol.51, 1301
(1990). pdf
28) C.A.Londos and T.Pavelka, "DLTS investigation of deep levels in bulk
GaAs under uniaxial stress" Semicond.Sci.Techn.5,1100 (1990). pdf
29) N.Guskos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas, A.Koufoudakis,
C.Mitros, H.Gamari-Seale and D.Niarchos, "EPR measurements on the Cu2+
ions in the high-Tc superconductors MBa2Cu3O7-δ phys.stat.sol (b) 165,249 (1991). pdf
30) N.Guskos, W.Likodimos, C.A.Londos, Ch.Trikalinos, A.Koufoudakis, C.Mitros,
H.Gamari-Seale, D.Niarchos and S.M.Paraskevas "Investigation of the
Samarium role in the physical properties of Sm0.5Re0.5Ba2Cu3O7-δ compounds in the orthorombic and tetragonal structures" Mod.Phys.Let.B
5,969 (1991). pdf
31) N.Guskos, M.Calamiotou, C.A.Londos, V.Likodimos, A.Koufoudakis, C.Mitros,
H.Gamari-Seale and D.Niarchos "Temperature dependence of the EPR spectra
of EuBa2Cu3O7-δ compounds in orthorombic and tetragonal phases", J. Phys. Chem.
Sol. 53,211 (1992). pdf
32) C.A.Londos, N.Guskos, J.Grammatikakis, N.Bogris, A.Kyritsis, and
A.Papathanassiou, "ITC studies of relaxation phenomena in CaF2:Gd3+
crystals", J.Phys.Chem.Sol. 53,249 (1992). pdf
33) N.Guskos, C.A.Londos, V.Likodimos, M.Calamiotou, A.Koufoudakis, C.Mitros,
H.Gamari-Seale and D.Niarchos, "EPR studies of the oxygenated and non-
oxygenated LaBa2Cu3O7-δ compounds", J.Phys.Condensed Matter 4,4261
(1992). pdf
34) N.Guskos, V.Likodimos, C.A.Londos, W. Windsch, H.Metz, A.Koufoudakis,
C.Mitros, H.Gamari-Seale, D.Niarchos, "Low T -dependence of the EPR
spectra of Gd0.5Ba2Cu3O7-δ compounds in tetragonal phase", phys.stat.sol.(b) 170,597
(1992). pdf
35) C.A.Londos, "The production and the evolution of A-centers and Divacancies
in Silicon" phys.stat.sol.(a) 132,43 (1992). pdf
36) C.A.Londos, A.Vassilikou-Dova, G.Georgiou and L.Fytros, "Infrared
studies of natural topaz" phys.stat.sol.(a) 133,473 (1992). pdf
37) C.A.Londos, "Investigation of a new metastable defect in boron-doped
Cz-Si." phys.stat.sol.(a) 133,429 (1992). pdf
38) N.Guskos, V.Likodimos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas,
A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos, " An EPR study of
Ceramics Pr0.5Re0.5Ba2Cu3O7-δ in orthorombic
and tetragonal phase", Journal of Superconductivity 5,457 (1992). pdf
39) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and D.Niarchos
"Experimental studies of the EuB2-xEuxCu3O7-δ compound in the tetragonal phase" J.Phys.Condens.Matter 5,229
(1993). pdf
40) C.A.Londos, M.J.Binns, A.R.Brown, S.A.McQuaid and R.C.Newman "Effect
of oxygen concentration on the kinetics of thermal donor formation in Silicon
at temperatures between 3500C and 5000C", Appl.Phys.Let.62,1525 (1993).
pdf
41) C.A.Londos, "Note on the identity of the Ev+0.34eV level in float-zone
Si" J.Appl.Phys.75,645 (1994) 42) C.A.Londos,
G.I.Georgiou, L.G.Fytros and K.Papastergiou, "Interpretation of infrared
data in neutron-irradiated silicon", Phys.Rev.B 50, 11531 (1994). pdf
43) S.A.McQuaid, M.J.Binns, C.A.Londos, J.H.Tucker, A.R.Brown and R.C.Newman
"The kinitics of oxygen dimer formation in Czochralski Silicon and the
effects of preheating in hydrogen gas", J.Appl.Phys 77,1427 (1994).
pdf
44) N.Guskos, V.Likodimos, C.A.Londos, V.Psycharis, C.Mitros, A.Koufoudakis,
H.Gamari-Seale, W.Windsch and H.Metz, “Structural, Magnetic and EPR Studies of
BaCuO2+x” J.Sol.Stat.Chem. 119,50 (1995). pdf
45) N.Sarlis, G.Kalkanis, C.A.Londos, S.S.Sklavounos and P.Tsakonas, "A
calculation of the surface charges and the electric field outside steady
current-carrying conductors" Eur.J.Phys. 17, 37
(1996). pdf
46) C.A.Londos, N.V.Sarlis, L.G.Fytros and K.Papastergiou, “Precursor Defect to
the Vacancy - dioxygen center in Si” Phys.Rev. B 53, 6900
(1996). pdf
47) M.J.Binns, C.A.Londos, S.A.McQuaid, R.C.Newman, N.G.Semaltianos and
J.H.Tucker “Novel aspects of oxygen diffusion in Silicon”, J.Mat.Sci: Mat. in Electronics,7, 347 (1996). pdf
48) N.V.Sarlis, C.A.Londos, L.G.Fytros, “Idendification of Infrared bands in
neutron-irradiated Silicon”, J.Appl.Phys 81, 1645 (1997). pdf
49) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘Isochronal annealing studies of
the oxygen-vacancy Centers in neutron irradiated Si’, phys.stat.sol (a) 163,
325 (1997). pdf
50) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘IR studies of defects formed
during postirradiation anneals of Cz-Si’, J.Appl.Phys 84, 3569 (1998). pdf
51) F.Gaiseanou, D. Tsoukalas, C.A. Londos, J. Stoemenos, C.A. Dimitriadis, J.
Esteve, C Postolache and M. Berku, ‘Oxygen related transport phenomena near the
polysilicon/SiO2 interface on Silicon during phosphorus diffusion’, Rom.
Journ. Phys. 43, 593 (1998).
pdf
52) A. Vassilikou-Dova, I.M. Kalogeras, B. Mecalik and C.A. Londos, ‘Polarising
field orientation and thermal treatment effects on the dielectric behavior of
fluroapatite’ J.Appl. Phys. 85, 352, (1999). pdf
53) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘A shoulder at 887 cm-1 infrared
band in neutron irradiated Si’, J.Appl.Phys 85, 8074 (1999). pdf
54) C.A.Londos, L.G.Fytros and G.I.Georgiou, ‘IR Studies of Oxygen-Vacancy
Related Defects in Irradiated Silicon’, Defect And Diffusion Forum, Vols 171-
172, 1 (1999) (Invited review article) in the journal “Defects and Diffusion in
Semiconductors”. An annual retrospective II, Edited by D.J. Fisher SCITEC
Publications. pdf
55) C.A.Londos and L.G.Fytros, ‘Investigation of the two IR bands at 1032 and
1043 cm-1 in neutron irradiated silicon’ J. Appl. Phys. 89, 928 (2001). pdf
56) V.V. Emtsev Jr, C.A. J. Ammerlaan, B.A. Andreev, V.V. Emtsev, G.A.
Oganesyan, A. Misiuk and C.A. Londos ‘Early stages of oxygen aggregation and
thermal donors in silicon annealed under hydrostatic pressure’, Journal of Materials
Science: Materials in Electronics 12, 223 (2001). pdf
57) C.A. Londos, I.V. Antonova, M. Potsidou, A. Misiuk, J. Bak-Misiuk and A. K.
Gutakovskii “Study of the conversion of the VO to the VO2 defect in silicon
heat-treated under uniform stress conditions”, J. Appl. Phys. 91, 1198
(2002). pdf
58) C.A. Londos, M. S. Potsidi, A. Misiuk, J. Ratajczak, V. V. Emtsev, G.
Antonaras “Complementary infrared and transmission electron microscopy studies
of the effect of high temperature-high pressure treatments on oxygen-related
defects in irradiated silicons” J. Appl. Phys. 94, 4363 (2003). pdf
59) I. V. Antonova, C. A. Londos, J. Bak-Misiuk, A. K. Gutakovskii, M. S.
Potsidi and A. Misiuk. “Defects in silicon heat-treated under uniform stress
and irradiated with fast neutrons” phys. stat. sol. (a) 199, 207
(2003). pdf
60) C.A. Londos, M. S. Potsidi, J. Bak-Misiuk, A. Misiuk, and V. V. Emtsev,
“Pressure assisted evoluion of defects in silicon”, Cryst. Res. Technol. 38, 1058 (2003).
pdf
61) L. Bischoff, G. L. R. Mair, C. J. Aidinis, C.A. Londos, Ch. Akhmadaliev and
Th. Ganetsos “A Au82Si18 liquid metal field-ion emitter for the production of
Si ions: fundamental properties and mechanisms”, Ultramicroscopy, 100,1
(2004). pdf
62) C.J. Aidinis, G.L.R. Mair, L. Bischoff, C.A. Londos, Ch Akhmadaliev and Th.
Ganetsos “The temperature dependence of the energy distribution of the beam
emitted by a Au82Si18 liquid metal field-ion emitter. Nuclear
Instruments and Methods in Physics Research B, 222, 627 (2004). pdf
63) G. L. R. Mair, L. Bischoff, C.A. Londos, Th. Ganetsos, Ch. Akhmadaliev and
C. J. Aidinis “An in-depth investigation into the temperature dependence of the
mass spectra of the beam produced by Au82Si18 liquid metal field emitter:
mechanisms of ion and cluster emission” Appl. Phys. A, 81,
385 (2005). pdf
64) I.V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A.
Bukowski, W. Jung, A. Barcz, “Pressure-induced formation of electrically active
centers in irradiated silicon: comparison of electron and neutron irradiation”,
Vacuum 77, 507 (2005). pdf
65) C.A.Londos, G.J.Antonaras, M.S. Potsidi, A. Misiuk, I.V.Antonova and V.V.
Emtsev “Production and evolution of defects in neutron-irradiated Si sudjected
to termal pre-treatments under hydrostatic pressure”, J. Phys.: Condens. Matter, 17, S2341 (2005).
pdf
66) L.I.Murin, J.L.Lindström, V.P. Markevich, A. Misiuk and C.A.Londos “Termal
double donor annihilation and oxygen precipitation at around 650oC in
Czohraski-grown Si: local vibrational mode studies”, J. Phys.: Condens. Matter, 17, S2237 (2005).
pdf
67) W.Jung, A Misiuk, C.A Londos, “Pressure stimulated creation of
oxygen-related defects in oxygen-implated and neutron-irradiated silicon”, Vacuum
78, 199 (2005). pdf
68) I.V.Antonova, A.Misiuk, C.A.Londos, “Electrical properties of
multiple-layer structures formed by implementation of nitrogen or oxygen and
annealed under high pressure” J. Appl. Phys. 99, 033506 (2006). pdf
69) M.S.Potidi and C.A.Londos, “The CiCs (SiI) defect in silicon: An infrared
spectroscopy study” J Appl. Phys. 100, 033523 (2006). pdf
70) C.A.Londos, G.D.Antonaras, M.S.Potidi, D.N.Aliprantis, A.Misiu, “Infrared
absorption spectra of defects in carbon doped neutron-irradiated Si”, J.Mater.Sci.:
Mater. Electr., 18, 721 (2007). pdf
71) C. A. Londos, A. Andrianakis, V. Emtsev and H. Ohyama “Radiation-induced
defects in Czochralski-grown silicon containing carbon and germanium”, Semicond.
Sci. Technol. 24, 075002 (2009).
pdf
72) C. A. Londos, A. Andrianakis, V. Emtsev, and H. Ohyama “Radiation effects
on the behavior of carbon and oxygen impurities and the role of Ge in
Czochralski grown Si upon annealing.” J. Appl. Phys. 105,
123508 (2009). pdf
73) A.Chroneos and C. A. Londos “Interaction of A-centers with isovalent
impurities in silicon”, J. Appl. Phys. 107, 093518 (2010). pdf
74) C. A. Londos, A. Andrianakis,E.N.Sgourou,V. V. Emtsev, and H. Ohyama,
“Effect of germanium doping on the annealing characteristics of oxygen and
carbon- related defects in Czochralski sSilicon.” J. Appl.
Phys. 107, 093520 (2010). pdf
75) C. A. Londos, A. Andrianakis,E.N.Sgourou,V. V. Emtsev, and H. Ohyama “IR
studies of the impact of Ge doping on the successive conversion of VOn defects
in Czochralski – Si containing carbon” J. Appl. Phys. 109, 033508 (2011).
pdf
76) A.Chroneos, C. A. Londos, H.Bracht “ A-centers and isovalent impurities in
germanium: Density functional theory calculations” Mater. Sci. Engineer. B 176, 453 (2011).
pdf
77) C. A. Londos E. N.Sgourou, A.Chroneos, V. V. Emtsev, Carbon, oxygen and
intrinsic defect interactions in germanium-doped silicon" Semicond. Sci. Technol. 26, 105024 (2011). pdf
78) A. Chroneos, C. A. Londos, E.N. Sgourou, “Effect of tin doping on oxygen
and carbon related defects in Czozhralski silicon” J. Appl. Phys. 110,
093507 (2011). pdf
79) V.V. Voronkov, R. Falster, C. A. Londos, A.Andrianakis E.N. Sgourou, H.
Ohyama “ Production of vacancy-oxygen defect in electron irradiated silicon in
the presence of self-interstitial-trapping impurities” J. Appl. Phys 110,
093510 (2011). pdf
80) A. Chroneos, C. A. Londos, E.N. Sgourou, P.Pochet “Point defect engineering
strategies to suppress A-center formation in silicon and germanium” Appl.
Phys. Let. 99, 241901 (2011).
pdf
81) V.V. Voronkov, R. Falster, C. A. Londos,“ The annealing mechanism of the
radiation-induced vacancy-oxygen defects in silicon ” J. Appl. Phys 111,
113530 (2012). pdf
82) C. A. Londos, D. Aliprantis, E.N. Sgourou, A. Chroneos, P. Pochet,
“Formation and evolution of oxygen-vacancy clusters in lead and tin doped
silicon ” J.Appl. Phys. 111, 123508 (2012). pdf
83) A. Chroneos, E.N. Sgourou,C. A. Londos, “Interaction of n-type dopants with
oxygen in silicon and germanium” J.Appl. Phys. 112, 073706 (2012) pdf
84) C. A. Londos, E.N. Sgourou, A. Chroneos “Defect engineering of the oxygen-vacancy
clusters formation in electron irradiated silicon by isovalent doping:An IR perspective” J.Appl. Phys. 112, 123517 (2012) pdf
85) E.N. Sgourou, D. Timerkaeva,C. A. Londos, D. Aliprantis, A. Chroneos, D.
Caaaaliste, P. Pochet “Impact of isovalent doping on the trapping of vacancy
and interstitial related defects in Si ” J.Appl. Phys. 113, 113506 (2013)
pdf
86) E. N. Sgourou, A. Andrianakis, C. A. Londos, A. Chroneos, “Production and
evolution of A-centers in n-type Si1-xGex” J.Appl. Phys. 113, 113507 (2013)
pdf
87) C. A. Londos, E.N. Sgourou, A. Chroneos “Impact of isovalent defect
engineering strategies on carbon-related clusters in silicon” J. Mater.
Sci.: Mater. Electr. 24, 1696 (2013) pdf
88) A. Chroneos , E. N. Sgourou, C. A. Londos, “Impact of germanium concentration
in the stability of E-centers and A-centers in Si1-xGex ” J. Mater. Sci.:
Mater. Electron. 24, 2772 (2013) pdf
89) C. A. Londos, G. Antonaras, A. Chroneos , “Localised vibrational mode
spectroscopy studies of self-interstitial clusters in neutron irradiated
silicon” J. Appl. Phys. 114, 043502 (2013) pdf
90) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “
A- centers in silicon studied with hybrid density functional theory” Appl.
Phys. Lett. 103, 052101 (2013) pdf
91) C. A. Londos, G. Antonaras, A. Chroneos , “Infrared signals correlated with
self-interstitial clusters in neutron-irradiated silicon” J. Mater. Sci.:
Mater. Electron. 24 , 4328, (2013) pdf
92) C. A. Londos, E. Sgourou, D. Timerkaaeva, A. Chroneos, P. Pochet, V. V.
Emtsev “Impact of isovalent doping on radiation defects in Si” J. Appl.
Phys. 114, 113504 (2013) pdf
93) C. A. Londos, G. Antonaras, A. Chroneos , “ Di-interstitial defect in
silicon re visited” J. Appl. Phys. 114, 193513 (2013) pdf
94) C. A. Londos , E. N. Sgourou, A. Chroneos, , “Oxygen-vacancy defects in
electron-irradiated Si: the role of carbon in their behavior ” J. Mater.
Sci.: Mater. Electron. 25, 914 (2014) pdf
95) A. Chroneos C. A. Londos , E. N. Sgourou, R. V. Vovk, “ Strategies to
suppress A-center formation in silicon and germanium from a mass action
analysis viewpoint” J. Mater. Sci.: Mater. Electron.
25, 1388 (2014) pdf
96) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U.
Schwingenschlogl “ Doping strategies to control A- centers in silicon: insights
from hybrid density functional theory”
Phys. Chem. Chem Phys. 16, 8487
(2014) pdf
97) C. A. Londos, E. N. Sgourou, D. Hall, A. Chroneos “Vacancy-oxygen
defects in silicon; the impact of isovalent doping” J.Mater. Sci.: Mater. Electron.25, 2395 (2014) pdf
98) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U.
Schwingenschlogl “ Carbon related defects in irradiated silicon revisited” SCIENTIFIC REPORTS 4, 4909 (2014) pdf
99) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U.
Schwingenschlogl “G-centers in irradiated silicon revisited: A hybrid density
functional theory approach” J. Appl. Phys.
115, 183509 (2014) pdf
100) E. N. Sgourou, C. A. Londos, and A. Chroneos, “Vacancy-Oxygen defects
in p-type Si1-xGex” J. Appl. Phys.
116, 133502 (2014) pdf
101) C. A. Londos, E. N. Sgourou, A.
Chroneos “ Modeling defect reactions processes to study the impact of carbon on
the production and the conversion of A-centers in silicon” J Mater Sci: Mater Electron 25, 4872 (2014) pdf
102) C. A. Londos, H. Angeletos, A. Chroneos “Semi-empirical modelling of
the di-interstitial defect in silicon” J Mater Sci: Mater
Electron 25, 5441 (2014) pdf
103) S.-R.G. Christopoulos, H. Wang, A. Chroneos, C. A. Londos, E. N.
Sgourou and U. Schwingenschlogl “VV and VO2 defects in irradiated silicon studied with hybrid
density functional theory” J Mater Ssi :
Mater Electron 26, 1568 (2015) pdf
104) C. A. Londos, H. Angeletos, E. N. Sgourou, A. Chroneos “ Engineering
VO, CiOi and CiCs defect in
irradiated Si through Ge and Pb doping” J Mater Sci: Mater
Electron 26, 2248 (2015) pdf
1) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and
A.Martens "Identification of the Carbon associated damage levels in
Silicon"14th International Conference on Defects in Semiconductors, 18-22
August, 1986 Paris-France, Edited by H.J. von Bardeleben Trans Tech
Publications, Switzerland. Mater. Sci. Forum,Vol.10-12,947 (1986). pdf
2) C.A.Londos "The influence of oxygen on the migration of the carbon
interstitial defect in Silicon" Proceedings "Gettering and Defect
Engineering in the Semiconductor Technology"-GADEST '87, 9-13 October
1987 Edited by H.Richter Acad. Sci. GDR,Frankfurt (Oder) GDR, p.109 (1987).
pdf
3) C.A.Londos "DLTS investigations of the Carbon-related centers in
Si" Proceedings "Gettering and Defect Engineering in the
Semiconductor Technology" GADEST '89, 9-13 October 1989, Edited by
M.Kittler, Sci-Tech Publications, Solid State Phenomena,
Vol. 6&7, 443 (1989). pdf
4) C.A.Londos "Diffusivities and Solubilities of various elements in
Si", Proc."Diffusion in Materials", Assuis, France, March 12-
25, 1989, Edited by A.L.Laskar, J.L.Bocquet, G.Brebec and C.Monty, Kluwer
Academic Publishers, NATO ASI Series E: Applied Sciences, Vol 179,665 (1990).
pdf
5) C.A.Londos "Observation of a configurationally unstable defect in
Si" 16th International Conference on Defects in Semiconductors
Bethlehem-USA, 22-26 July 1991, Edited by M.Stavola and G.G.DeLeo Trans Tech
Publications, Mater. Sci. Forum, Vol.83-87,351 (1992). pdf
6) C.A.Londos "A search on the identity of the Ev+0.34eV C-related defect
in P-Si" Proceedings "Gettering and Defect Engineering in the
Semiconductor Technology" GADEST '91, 13-19 October 1991, Germany, Edited
by M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol.19-20,247
(1991). pdf
7) W.Licodimos, N.Guskos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis, C.Mitros,
H.Gamari-Seale, D.Niarchos. "EPR spectrum of Tm(2+)
ions in the tetragonal phase of (La,Tm)-Ba-Cu-O compound" International
conference on Magnetism, 2-6 September Edinburgh, England,1991. J. Magnet. Magnetic Mater.104-107, 563 (1992).
pdf
8) K.Eftaxias, C.A.Londos and P.Dovas "On the number of repetitive
measurements in a laboratory experiment" 1st General Conference of the
Balkan Physical Union, 26-28 September 1991, Thessaloniki, Greece, Edited by
K.M.Paraskevopoulos, Vol I, 57-59 (1992). pdf
9) C.A.Londos, A.Vasilikou-Dova, G.Georgiou, L.Fytros "Spectroscopic
investigation of natural Topaz" 1st General Conference of the Balkan
Physical Union, 26-28 September 1991, Thessaloniki, Greece, Edited by
K.M.Paraskevopoulos, Vol II, 956-958 (1992). pdf
10) N.Gouskos, W.Likodimos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis,
C.Mitros, H.Gamari-Seale and D.Niarchos "EPR, XRD and Magnetic
measurements of the ceramic YbBa2Cu3O7-δ in the orthorhombic and tetragonal phase" 1st General
Conference of the Balkan Physical Union, 26-28 September 1991, Thessaloniki,
Greece, Edited by K.M.Paraskevopoulos, Vol II, 990-992 (1992). pdf
11) H.Richter, K.Schmalz, C.A.Londos "Estimation of Carbon Substtitutional
Concentration in Czochralski-grown Silicon by means of Deep-Level Transient
Spectroscopy and Infrared Measurements" Third German-Greek Workshop on
"Materials Research for Information Technology", Edited by G.Kaiser
and N.Constantopoulos, Thessaloniki, 26-27 September 1991. Bilateral
Seminars of the International Bureau, Vol.7, 27 (1992). pdf
12) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and
C.Mitros "Zero-field splitting of the ground state of Eu ions in
EuBa2Cu3O7-δ compound with large oxygen deficiency" 26th Congress Ampere on
Magnetic Materials, 6-12 September 1992, Athens, Greece. Edited
by A.Anagnostopoulos, F.Milia, A.Simopoulos, Athens (1992), p.66. pdf
13) C.A.Londos, S.A.McQuaid, M.J.Binns, R.C.Newman and J.H.Tucker "Effect
of oxygen concentration on the kinetics of oxygen loss and thermal donor
formation in Silicon at temperatures between 350 oC and 500 oC"
Proceedings "Gettering and Defect Engineering in the Semiconductor
Technology" GADEST '93, 9-11 October 1993, Edit. by
M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol.32-33,161
(1993). pdf
14) S.A.McQuaid, C.A.Londos, M.J.Binns, R.C.Newman and J.H.Tucker "The
kinetics of oxygen loss and Thermal donor formation in Silicon at temperature
between 350 oC and 500 oC" 17th International Conference of Defects in
Semiconductors, (ICDS-17) 18-24 July 1993, Gmunden-Austria, Edited by W.Jantch,
Trans Tech Publications, Switzerland. Mater.
Sci. Forum, Vols.143-147, 963 (1994). pdf
15) C.Newman, M.J.Binns, C.A.Londos, S.A.McQuaid and J.H.Tucker “Oxygen
Aggregation Phenomena in Silicon” Proceedings "Gettering and Defect
Engineering in the Semiconductor Technology" GADEST '95, 2-7 September
1995, Germany Edited by M.Kittler, Sci-Tech Publications, (Invited) Solid
State Phenomena, Vol.47-48, 247 (1996). pdf
16) C.A.Londos, G.Georgiou, L.G.Fytros and N.Sarlis “New Infrared bands in
neutron-irradiated Si” Proceedings "Gettering and Defect Engineering in
the Semiconductor Technology" GADEST '95, 2-7 September 1995, Germany
Edited by M.Kittler, Sci-Tech Publications, Solid State Phenomena,
Vol.47-48, 281 (1996). pdf
17) C.A.Londos, N.V.Sarlis and L.G.Fytros “An isochronal annealing study of the
kinetics of VO and VO2 in neutron - irradiated Si” Proceedings - NATO Advanced
Research Workshop - “Oxygen ‘96”. "Early stages of
Oxygen Precipitation in Silicon", Exeter, UK 26-29 March 1996 Vol. 17, 477
(1996). pdf
18) N.V.Sarlis and C.A.Londos “Infrared bands association with
multivacancy-oxygen defects in Silicon” CAS ‘96 Proceedings, IEEE, 1996
International Semiconductor Conference, 19th edition October 9-12,1996, Sinaia,
ROMANIA. Vol I, 53 (1996).
pdf
19) C.A.Londos, N.V.Sarlis and L.G.Fytros “An IR study of the annealing
behaviour of A-center in Silicon” Proceedings “Gettering and Defect Engineering
in the Semiconductor Technology” GADEST ‘97, 5-10 October 1997,Spa (Belgium)
Edited by C.Claeys,J.Vanhellemont,H.Richter and M.Kittler Solid State
Phenomena Vols 57-58, 245 (1997). pdf
20) N.V.Sarlis, C.A.Londos and L.G. Fytros “Correlations of vibrational
frequencies with VO4 defect in irradiated Silicon” CAS ‘97 Proceedings,
IEEE, 1997 International Semiconductor Conference, 20th edition October 7-11,
1997, Sinaia, ROMANIA, Vol I, 59 (1997). pdf
21) C.A Londos, N. Guskos, M. Wabia and J. Grybos “General aspects of solar
cells and photovoltaic systems (PV) used in Greece” 6th Intern. Symposium on
Heat exchange and renewable energy sources, Szczecin-Swinoujcie (POLAND), 7-
9.09.1998, p. 257 (1998) (Invited). pdf
22) F. Gaisenau, D. Tsukalas, J.Stoimenos, C.A. Dimitriadis, C.A Londos, J.
Esteve, C. Postoleche “Atomistic transport phenomena near the polysilicon/SiO2
interface on silicon during the phosphorus diffusion” Abstract No 526 193rd
Electrochemical Society meeting, May 3-8, (1998), San Diego. pdf
23) A. Vassilikou-Dova, B. Macalik, J.M Kalogeras, M. Kalamiotou, C.A. Londos
and L.G. Fytros «TSDS probe of anisotropic polarizability in fluroapatite
single crystals” Intern. Conf. Eurodim’98, 6-12 July 1998,
Keele (U.K) Rad. Eff. Def. Solids 149, 279 (1999). pdf
24) L.G. Fytros, G. I. Georgiou C.A. Londos and V.V. Emtsev “An infrared
investigation of the 887 cm-1 band in Czochralski Silicon” 20th Intern. Conf. On Defects in Semiconductors, 26-30 July 1998,(ICDS-20) Berkley- U.S.A Physica B 273-274, 312 (1999).
pdf
25) V. V. Emtsev Jr, C.A. J. Ammerlaan, B.A Andreev, V.V. Emtsev, G.A.
Oganesyan, A. Misiuk, C.A Londos “Early stages of oxygen aggregation and
thermal donors in silicon annealed under hydrostatic pressure” Third Intern.
Conf. On Materials for
Microelectronics, 16-17 October 2000, Ireland, 123 (2000). pdf
26) A. Misiuk, J. Bak-Misiuk, A. Barcz, A. Romano-Rodriguez, I.V. Antonova,
V.P. Popov, C.A. Londos and J. Sun “Effect of annealing at argon pressure up to
1.2 Gpa on hydrogen-plasma etched and hydrogen –implanted single-crystalline
Silicon.” Proceedings of the Conf.‘Hydrogen Materials
Science and Chemistry of Hydrides, ICHMS’ 99, Katsively, Ukraine 2-8/9/1999. Intern. Journal of Hydrogen
Energy, 26, 483 (2001). pdf
27) C.A. Londos, L. G. Fytros, A. Misiuk, J. Bak-Misiuk, M. Prujsczczy, M.
Potsidou “The effect of high pressure-high temperature treatment on neutron
irradiation induced defects in Czochralski silicon” Intern. Conf.
On Solid State Crystals- Materials Science and Applications (9/10-13/10/2000,
Zakopane, Poland (ICSS’ 2000), SPIE Proceedings, 4412, 91 (2001). pdf
28) V.V. Emtsev Jr, V. V. Emtsev, G.A. Organesyan, A. Misiuk, C.A. Londos
“Peculiarities of the thermal donor formation in Czochralski grown silicon
under high hydrostatic pressure” Intern. Conf. On Solid State Crystals-Materials Science and Applications
(9/10-13/10/2000, Zakopane, Poland (ICSS’ 2000), SPIE Proceedings, 4412, 81
(2001). pdf
29) N. Sarlis, H. Londos, G. Kalkanis “Teaching Transverse (but not
Longitudinal?) Electromagnetic Waves-The Underlying Reasons and an
Instructional Approach ” Third International
Conference on Science Education Research in the Knowledge Based Society
Proceedings, Vol. II, 609 (2001). pdf
30) J. Bak-Misiuk, C. A. Londos, A. Misiuk, L.G. Fytros, H. B. Surma, J. Trela,
K. Papastergiou, J. Domagala “Stress-induced transformation of microdefects in
neutron irradiated Czochralski silicon” E-MRS 2000 Proceedings (30/5-2/6/2000,
Strasbourg, France) Intern. J. Inorganic Materials, 3, 1307 (2001). pdf
31) C.A. Londos, M. Potsidou, A. Misiuk, V.V. Emtsev, J. Bak-Misiuk “The effect
of high temperature-high pressure treatment on the annealing behavior of VO
center in neutron-irradiated Czochralski silicon” 21st Intern. Conf. On Defects in Semiconductors,(ICDS-21) 16-20 July
2001, Giessen- Germany Physica B, 308-310, 313 (2001). pdf
32) C.A. Londos, M. Potsidou, A. Misiuk and I.V. Antonova “A study of the
Conversion of the VO to the VO2 Defect in Heat- Treated Silicon under Stress”
Proceedings “Gettering and Defect Engineering in the Semiconductor Technology”
GADEST ‘01, 30/09-04/10 2001, Catania (Italy) Edited by V.Raineri, H.Richter
and M.Kittler Solid State Phenomena Vols 82-84, 249 (2002). pdf
33) V.V. Emtsev, A. Misiuk, B.A. Andreev, V.V. Emtsev Jr, C.A. Londos, G.A.
Oganesyan and D.S. Poloskin “Impact of Compressive Stress on the Formation of
Thermal Donors in Heat-Treated Silicon” Proceedings “Gettering and Defect
Engineering in the Semiconductor Technology” GADEST ‘01, 30/09-04/10 2001,
Catania (Italy) Edited by V.Raineri, H.Richter and M.Kittler Solid State
Phenomena Vols 82-84, 259 (2002). pdf
34) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A.
Andreev, D.I. Kuritsyn, A. Misiuk, B. Surma and C. A. Londos “Double thermal
donors in Czochralski-grown silicon heat-treated under atmospheric and high
hydrostatic pressures” 10th Intern. Conf. on Shallow Levels Centers in
Semiconductors (10th SLCS) Warsaw, Poland 24-27 July 2002 phys. stat. sol (b)
235,75 (2003). pdf
35) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, A.
Misiuk, B. Surma, A. Bukowski, C. A. Londos, M.S. Potsidi “Oxygen agglomeration
and formation of oxygen-related thermal donors in heat-treated silicon” Intern.
Conf. On Solid State Crystals 2002: Materials Science
and Applications (14/10-18/10/2002, Zakopane, Poland (ICSS’ 2002), (invited)
Cryst. Res. Technol. 38, 394 (2003). pdf
36) I. V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A.
Bukowski, W. Jung, A. Barcz “Pressure induced formation of the electrically
active centers in electron and neutron irradiated silicon” Proceedings of the
7th Intern. Conf. On Electron
Beam Technologies (EBT 2003) (1-6/6/2003), Varna, Bulgaria. pdf
37) B. Surma, C. A. Londos, V. V. Emtsev, A. Misiuk, A. Bukowski, M.S. Potsidi
“Infrared studies of oxygen-related defect formation in neutron- irradiated
Cz-silicon after annealing at T=450-650 oC under hydrostatic pressure” E-MRS
2002, spring meeting, Strasbourg, 18-21/6/2002, Strasbourg, France J. Mater.
Sci. Engin. B 102, 339 (2003).
pdf
38) C.A. Londos, M. S. Potsidi, and E. Stakakis “Carbon-related complexes in
neutron-irradiated silicon” 22nd Intern. Conf. On
Defects in Semiconductors,(ICDS-22) 28/7-1/8/ 2003,
Aarhus, Denmark Physica B 340-342, 551 (2003). pdf
39) I. V. Antonova, A. Misiuk, C.A. Londos, A. Barcz, E. N. Vandyshev, J.
Bak-Misiuk, K.S. Zhuravlev, M. Kaniewka “Defect- related diffusion of hydrogen
in silicon” 22nd Intern. Conf. On
Defects in Semiconductors, (ICDS-22) 28/7-1/8/ 2003, Aarhus, Denmark Physica
B 340-342, 659 (2003). pdf
40) V.V. Emtsev, B. A. Andreev, V. Yu Davydov, D. S. Poloskin, G. A. Oganesyan,
D. I. Kryzhkov, V. B. Shmagin, V. V. Emtsev, Jr, A. Misiuk and C. A. Londos
“Stress-induced changes of thermal donor formation in heat-treated Czochralski
grown silicon” 22nd Intern. Conf. On
Defects in Semiconductors, (ICDS-22) 28/7-1/8/ 2003, Aarhus, Denmark Physica
B 340-342, 769 (2003). pdf
41) W. Jung, M. Kaniewska, A. Misiuk, C.A. Londos “Study of the defects in
oxygen implanted silicon subjected to neutron irradiation and high pressure
annealing” Proceedings of the 10th Intern. Conf. of Defects- Imaging and
Physics in Semiconductors, DRIP-X 29/9- 2/10/ 2003, Batz-Sur-Mer, Loire
Atlantique, France Eur. Phys. J. Appl. Phys. 27, 115 (2004). pdf
42) C. A. Londos, M.S. Potsidi, A. Misiuk, J. Bak-Misiuk, A. Shalimov and V. V.
Emtsev “Investigations of the effect of high pressure on the annealing behavior
of oxygen related defects in silicon” Proceedings “Gettering and Defect
Engineering in the Semiconductor Technology” GADEST ‘03, 21-26/9/2003, Berlin
(Germany) Edited by H.Richter and M.Kittler Solid State Phenomena Vols
95-96, 59 (2004). pdf
43) C. J. Aidinis, L. Bischoff, G. L. R. Mair, C.A. Londos, Th. Ganetsos and
Ch. Akhmadaliev “Study of a liquid metal field ion emitter for the production
of Si ions” Micro and Nano Engineering Conf. 22-25/09/2003, Cambridge (UK) Microelectronic
Engineering Vols 73-74, 116 (2004). pdf
44) B. Surma, A. Misiuk, A. Wnuk, C. A. Londos, and A. Bukowski ‘Optical
studies of defects generated in neutron-irradiated Cz-Si during HP-HT
treatment’ International Conference on Solid State Crystals- 7th Polish Conf.
on Crystal Growth (ICSSC- 7PCCP), 16/05-20/05/2004, Zakopane, Poland Cryst. Res. Technol. 40, 471 (2005).
pdf
45) C. A. Londos, M. S. Potsidi and V. V. Emtsev ‘Effect of carbon on oxygen
precipitation in Czochralski silicon’ 10th International Conference on Extended
Defects in Semiconductors, EDS 2004, 11/09-17/09/2004, Chernogolovska, Russia phys.
stat. sol (c), 2, 1963 (2005). pdf
46) A. Misiuk, B. Surma, C. A. Londos, J. Bak-Misiuk, W. Wierzchowski, K.
Wieteska and W. Graeff ‘Oxygen precipitation and creation of defects in neutron
irradiated Cz-Si annealed under high pressure’ 10th International Conference on
Extended Defects in Semiconductors, EDS 2004, 11/09-17/09/2004, Chernogolovska,
Russia phys. stat. sol (c), 2,1812 (2005). pdf
47) L.Bischoff, W.Pilz, Th.Ganetsos, Ch. Akmadaliev, C.J. Aidinis and
C.A.Londos ‘On the temperature dependence of the mass spectra of AuGe and
AuGeSi liquid metal alloy ion sources’ Second Confedence on Microelectronics,
Microsystems and Nanotechnology, 14-17 November 2004, Athens, Greece Journal
of Physics: Conference Series 10, 214 (2005). pdf
48) C.A. Londos, G.D. Antonaras, M.S. Potsidi, A. .Misiuk, V.V. Emtsev ‘The
effect of thermal treatments on the annealing behaviour of oxygen-vacancy
complexes in irradiated carbon-doped silicon’ Proceedings “Gettering and Defect
Engineering in the Semiconductor Technology” GADEST ‘05, 21-26/9/2003, Giens
(France) Edited by B.Pichaud,,A.Claverie,D.Alquier H.Richter and M.Kittler Solid
State Phenomena Vols. 108-109, 205 (2005). pdf
49) L.I. Murin, J.L. Lindström, B.G. Svenson, V.P. Markervich, A.R. Peaker and
C.A. Londos ‘VOn () Defects in Irradiated ans Heat-Treated Silicon’ Proceedings
“Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘05,
21- 26/9/2003, Giens (France) Edited by B.Pichaud,,A.Claverie,D.Alquier H.Richter
Solid State Phenomena Vols. 108-109, 267 (2005). pdf
50) J. Bak-Misiuk, A. .Misiuk, B. Surma, A. Shalimov, C.A. Londos ‘Infuence of
neutron irradiation on stress-induced oxygen precipitation in Cz-Si’
Proceedings “Gettering and Defect Engineering in the Semiconductor Technology”
GADEST ‘05, 21-26/9/2003, Giens (France) Edited by
B.Pichaud,,A.Claverie,D.Alquier H.Richter Solid State Phenomena Vols. 108- 109,
169 (2005). pdf
51) V.V. Emtsev, B.A. Andreev, V.V. Emtsev Jr., G.A. Oganesyan, D.I. Kryzhkov,
A. Misiuk, C.A.Londos and M.S. Potsidi ‘New donors in Czochralski Grown Silicon
Annealed at under Compressive Stress’ Proceedings “Gettering and Defect
Engineering in the Semiconductor Technology” GADEST ‘05, 21-26/9/2003, Giens
(France) Edited by B.Pichaud, A.Claverie, D.Alquier, H.Richter. Solid State Phenomena Vols. 108-109, 181 (2005). pdf
52) L.I.Murin, V.P.Markevich,J.L.Lindstrom, C.A.Londos ‘Optically active
defects formed upon thermal double donor annihilation in Si’ Proceedings 5th
International Conference "High Education Science, Industry, International
Cooperation" Edited by V.V.Ponorgadov et al, Minsk, Belarus, 13-15 October
2004, pp111- 114,(2005) (Invited). pdf
53) W.Jung, A.Misiuk, C.A.Londos, D.Yang, I.V.Antonova, M.Prujszczyk ‘Influence
of high pressure annealing on electrical properties of surface layer of neutron
irradiated or germanium doped Cz-Si.’ X Seminar of Surface and thin layer
structures (17-21) May 2005 Szklarska Poreba, Poland Optica Applicata, 35,
393 (2005). pdf
54) I.V.Antonova, A. Misiuk, C.A.Londos ‘Electrical characteristics of SOI-Like
structures formed in nitrogen or oxygen implanted silicon treated under high
pressure’ 12th International Symposium on Silicon-on-Insulator Technology and
Devices Edited by G.K. Celler, S. Cristoloveanu, J.G. Fossum, F. Ganiz, K.
Izumi, Y.M. Kim, 207th Meeting of the Electrochemical Society (15-20) May
pp.325-330 2005, Quebec, Canada Silicon-on-Insulator Technology and Devices
XII, DV-2005-03. pdf
55) I.V.Antonova, A. Misiuk, C.A.Londos ‘Electrical behaviour of SOI-Like
structures formed under high pressure in nitrogen or oxygen implanted silicon’
20th AIRAPT-43rd EHPRG Conference in Karlsruhe (27.06-01.07) 2005. Programme and book of Abstracts p.208, abstract T3-P306.
pdf
56) C.A.Londos, M.S.Potsidi, G.D.Antonaras, A.Andrianakis ‘Isochronal annealing
studies of carbon-related defects in irradiated silicon’ 23nd Intern. Conf. On Defects in Semiconductors,
(ICDS-23) (25-29) July 2005, Awaji Island, Japan Physica B 376-377, 165
(2006). pdf
57) A.Misiuk, D.Yang, B.Surma,C.A.Londos, J.Bak-Misiuk, A.Andrianakis ‘Defects
in Ge-doped Cz-Si annealed under high stress’ Proceedings of the 11th Intern.
Conf. on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-X
15-19 September 2005, Beijing, China Mater. Sci. Semicond. Process. 9, 82 (2006). pdf
58) A.Misiuk, C.A.Londos, J.Bak-Misiuk, D.Yang, W.Jung, M.Prujszcyk
‘Stress-dependent transformation of interstitial oxygen in processed Ge-doped
Cz- Si’ E-MRS Proceedings, Symp.U (Si-based Materials for advanced
Microelectronics devices: Synthesis, defects, and diffusion), 29/5-2/6/2006,
Strasbourg, France Nucl. Instr.Meth.Phys. Res.B, 253, 295, (2006). pdf
59) A. Misiuk, B. Surma, J. Bak-Misiuk, C.A.Londos, P. Vagovic, I. Kovacevic,
B. Pivac,W. Jung, M. Prujszczyk ‘Revealing the radiation-induced effects in
silicon by processing at enhanced temperatures- pressures’ 6th European
Conference on Luminescent Detectors and Transformers of Ionizing Radiation
(LUMDETR 2006) (19-23) June, 2006, Lviv, Ukraine Radiation measurements,
42,689 (2007). pdf
60) C.A.Londos, A. Andrianakis, D. Aliprantis, H. Ohyama ‘IR studies of
oxygen-vacancy defects in electron irradiated Ge-doped Si’ 24rth Intern. Conf. On Defects in Semiconductors, (ICDS-24) 22/7-27/7/
2007, Albuquerque, New Mexico,USA Physica B
401-402, 487 (2007). pdf
61) C.A.Londos, G.D. Antonaras, M.S. Potsidi, E.N. Sgourou, I.V. Antonova, A.
Misiuk ‘IR studies on the interaction between thermal and radiation defects in
Si’ GADEST ’07, 14-19/10/2007, Erice, Italy Edited byA.Cavallini,H.Richter,M.kittler
and S.Pizzini Solid State Phenomena 131-133, 351, (2008). pdf
62) C.A. Londos, A. Andrianakis, V.V. Emtsev, G.A. Oganesyan, H. Ohyama “The effect
of germanium doping on the evolution of defects in silicon.” E-MRS
Proceedings, Symp.I (Front-end junction and contact formation in future
Silicon-Germanium based devices), 26-30/5/2008, Strasbourg, France. Materials Science and Engineering B 154–155, 133–136 (2008).
pdf
63) C.A. Londos,G.D. Antonaras, M.S. Potsidi, A. Misiuk “The influence of
thermal treatments under hydrostatic pressure prior to irradiation on the
annealing characteristics of the VO defect in Si.” E-MRS
Proceedings, Symp.K (Advanced silicon material research for electronic and
photovoltaic applications), 26-30/5/2008, Strasbourg, France. Materials Science and Engineering B 159–160, 122–127 (2009).
pdf
64) A. Ide, R.Horiuchi, K. Takakura, M.Yoneoka, H. Ohyama, C.A. Londos, A.
Andrianakis, N.Inoue “The production of the defects in electron-irradiated
Si1-x Gex crystal evaluated by IR spectroscopy” Extended Abstracts 28th
Electronic Material Symposium (EMS-28), 8-10/7/2009, Shiga, Japan. pdf
65) A.Misiuk, W.Wierzchowski, B.Surma, A.Wnuk, J.Bak-Misiuk, K.Wieteska,
A.Barcz, A.Andrianakis, C.A.Londos, D.Yang, M.Prujszczyk, W.Graeff “Defects in
Czochralski-grown Si–Ge annealed under high hydrostatic pressure.” 9th International School and Symposium on Synchrotron
Radiation in Natural Sciences (ISSR NS-9) 15-20/6/2009, Ameliowka, Poland Radiation
Physics and Chemistry 78, S64–S66 (2009). pdf
66) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, J.Bak-Misiuk, M.
Prujszczyk, C.A. Londos, W. Graeff “Thermally induced defects in silicon
irradiated with fast neutrons.” 9th International School and
Symposium on Synchrotron Radiation in Natural Sciences (ISSR NS-9)
15-20/6/2009, Ameliowka, Poland Radiation Physics and Chemistry 78, S67–S70
(2009). pdf
67) C.A. Londos, A. Andrianakis, V.V. Emtsev, H. Ohyama “The effect of
germanium doping on the behaviour of oxygen and carbon impurities and radiation
related defects in silicon” 25th Intern. Conf. on Defects in Semiconductors
(ICDS-25) 20- 24/7/2009, St. Petersburg, Russia Physica B 404, 4693 (2009)
(Invited). pdf
68) L.I.Murin, B.G. Svenson, J.L.Lindstrom,V.P.Markevich and C.A.Londos
“Trivacancy- oxygen complex in silicon: Local Vibrational Mode
characterization.” 25th Intern. Conf.
on Defects in Semiconductors (ICDS-25) 20-24/7/2009, St. Petersburg, Russia Physica
B 404, 4658 (2009). pdf
69) C.A. Londos, A. Andrianakis, D. Aliprantis, E.N. Sgourou, V.V. Emtsev, H.
Ohyama “The effect of germanium doping on the production of carbon-related
defects in electron-irradiated Czochralski silicon.” GADEST ’09 Conference
26/9- 2/10/2009, Berlin, Germany, Edited by M.Kittler and H.Richter Solid
State Phenomena 156-158, 187-192, (2010). pdf
70) A. Andrianakis, C.A. Londos, A. Misiuk, V.V. Emtsev, G.A. Oganesyan, H.
Ohyama “The production of vacancy-oxygen defects in electron-irradiated Cz-Si
initially treated at high temperature and high pressure” GADEST ’09 Conference
26/9- 2/10/2009, Berlin, Germany, Edited by M.Kittler and H.Richter Solid
State Phenomena 156-158, 123-128, (2010). pdf
71) L.I. Murin, B.G. Svenson, J.L. Lindström,V.P. Markervich, and C.A. Londos
“Divacancy- oxygen and trivacancy- oxygen complexes in silicon: Local
Vibrational Mode studies.” GADEST ’09 Conference 26/9-2/10/2009, Berlin,
Germany, Edited by M.Kittler and H.Richter Solid State Phenomena 156-158,
129-134, (2010). pdf
72) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, C.A. Londos,
A.Andrianakis, J.Bak-Misiuk, D.Yang and B.Surma “Defect structure of Nitrogen
doped Czochralski Silicon annealed under enhanced pressure” Proceedings of the
8th national meeting of synchrotron Radiation users, 24-26/9/2009,
Podlesice,Poland Acta Physica Polonica A 117,34. pdf
73) A. Misiuk, N.V.Abrosimov, J.Bak-Misiuk, W.Wierzchowski, K.Wieteska,C.A.
Londos, J.Kucytoxski “Evaluation of Cz- Si-Ge microstructure after
high-temperature- pressure treatment” 10th International workshop on the
expert evaluation and control of compound semiconductor materials and
technologies, 19-21/5/2010, Darmstadt,Germany (extended abstract). pdf
74) A. Misiuk, C.A. Londos,, W.Wierzchowski, J.Bak-Misiuk, P.Romanowski,
K.Wieteska, E.N.Sgourou, M. Prujszczyk “ Oxygen-related defects in neutron
irradiated N-contaning annealed under enhanced- pressure” 3rd International
conference on “radiation interaction with materials and its use in technologies
2010” 20-23/9/2010, Kaunas Lithuania TO-16, pp. 60-63 (2010). pdf
75) C.A. Londos, A. Andrianakis, A.Misiuk “The effect of neutron irradiation on
oxygen aggregation processes in Si material treated under hydrostatic pressure”
EMRS Conference, Symposium I, ‘Advanced Silicon Materials Research for
Electronics and Photovoltaic Applications II, 7-11/6/2010, Strasburg, France Phys.
Stat. Solidi (a) 208, 616, (2011). pdf
76) C.A. Londos, A. Andrianakis, D. Aliprantis, E.N. Sgourou and H. Ohyama “IR
studies of oxygen-related and carbon-related defects in Sn-doped Silicon” EMRS
Conference, Symposium I, ‘Advanced Silicon Materials Research for Electronics and
Photovoltaic Applications II, 7-11/6/2010, Strasburg, France Phys. Stat.
Solidi (c) 8, 701, (2011). pdf
77) D.Kropman, T. Kärner, S. Dolgov, I. Heinmaa, T. Laas, C.A. Londos
“Interaction of point defects with impurities in the Si-SiO2 system and its
influence on the interface properties” EMRS Conference, Symposium I, ‘Advanced
Silicon Materials Research for Electronics and Photovoltaic Applications II,
7-11/6/2010, Strasburg, France Phys. Stat. Solidi (c) 8, 694, (2011). pdf
78) C.A. Londos, E.N.Sgourou, A. Andrianakis, A. Misiuk, V.V. Emtsev, H. Ohyama
“IR studies of VOn, CiOi, and CiCs defects in Ge-doped Cz-Si ” GADEST ’11
Conference 25 – 30/9//2009, Loipersdorf, Austria, Solid State Phenomena
178-179, 147 (2011). pdf
79) A. Misiuk, J. Bak-Misiuk, B. Surma, W. Wierzchowski, K. Wieteska, C.A.
Londos, N.V. Abrosimov, and J. Kucytowski “Impact of Hydrostatic Pressure
Applied at Annealing on Homogeneity of Si-Ge Single Crystals” Solid State
Phenomena 178-179, 35 (2011). pdf
80) D.Kropman, E.Mellikov, T. Kärner, I. Heinmaa, T.Laas, C.A. Londos, A.Misiuk
“Interaction of point defects with impurities in the Si-SiO2 system and its
influence on the interface properties, Solid State Phenomena 178-179, 263
(2011). pdf
1)
Χ.Λόντος,
"Μελέτη
σημειακών
ατελειών στο
πυρίτιο με τη
μέθοδο της
φασματοσκοπίας
βαθέων
σταθμών", IV
Πανελλήνιο
Συνέδριο
Φυσικής, 18-22
Δεκεμβρίου 1986,
Αθήνα. pdf
2)
Ι.Γραμματικάκης,
Χ.Λόντος,
Β.Κατσίκα και
Ν.Μπόγρης "Μέτρηση
παραμέτρων
σημειακών
ατελειών LiF+Be2+" IV
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 20-23 Σεπτεμβρίου
1988, Μαραθώνας,
Αττική. pdf
3) Ν.Γκούσκος,
Ι.Γραμματικάκης,
Χ.Λόντος,
Ν.Μπόγρης και
Α.Κυρίτσης
"Μια νέα
εξήγηση
φαινομένων
αποκατάστασης
σε κρυστάλλους
CaF:Gd3+", V
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 19-23
Σεπτεμβρίου 1989,
Ξάνθη. pdf
4) Ν.Γκούσκος,
Α.Κοντός,
Χ.Λόντος,
Σ.Μ.Παρασκευάς,
Α.Κουφουδάκης,
Χ.Μήτρος, Ε.Γκάμαρη-Seale
και Δ.Νιάρχος
"Επίδραση του
επιδερμικού φαινομένου
στο φάσμα EPR του
ιόντος Cu στο
υλικό Pr0.5Y0.5Ba2Cu3O7-δ". VI
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 26-29
Σεπτεμβρίου 1990,
Ηράκλειο,
Κρήτη. pdf
5) Β.Λυκοδήμος,
Ν.Γκούσκος,
Χ.Λόντος,
Σ.Παρασκευάς,
Α.Κουφουδάκης,
Χ.Μήτρος,
Ε.Γκαμαρη-Seale και
Δ.Νιάρχος "EPR μελέτη
του
πολυκρυσταλλικού
συστήματος (La,Nd) Ba Cu O
στην τετραγωνική
δομή". VII
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς Κατάστασης,
22-25 Σεπτεμβρίου 1991,
Θεσσαλονίκη. pdf
6) Ν.Γκούσκος,
Χ.Λόντος,
Β.Λυκοδήμος,
Σ.Παρασκευάς,
Α.Κουφουδάκης,
Χ.Μήτρος,
Ε.Γκαμαρη-Seale και
Δ.Νιάρχος "Χρήση
Φασματοσκοπίας
EPR για τον ποιοτικό
έλεγχο
υπεραγωγών Gd-Ba-Cu-O". VII
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 22-25
Σεπτεμβρίου 1991,
Θεσσαλονίκη. pdf
7) Ν.Γκούσκος,
Χ.Λόντος,
Β.Λυκοδήμος,
Α.Κουφουδάκης,
Χ.Μήτρος, Ε.Γκαμαρη-Seale
και Δ.Νιάρχος "EPR
και μαγνητική
μελέτη του συστήματος
Eu-Ba-Cu-O στην
τετραγωνική
δομή" VIII
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 22-25
Σεπτεμβρίου 1992,
Ιωάννινα. pdf
8) Χ.Λόντος "Η
επίδραση του
Οξυγόνου στην
κινητική σχηματισμού
θερμικών δοτών
στο πυρίτιο". IX
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 27-29
Σεπτεμβρίου 1993,
Πάτρα. pdf
9) Χ.Λόντος,
Λ.Φύτρος,
Γ.Γεωργίου και
Κ.Παπαστεργίου
"Μελέτη
ατελειών σε
κρύσταλλο Si
ακτινοβολημένο
με νετρόνια με
τη μέθοδο της
υπέρυθρης
φασματοσκοπία".
X Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 18-21
Σεπτεμβρίου 1994,
Δελφοί. pdf
10) Ι.Καλογεράς,
Α.Βασιλικού-Ντόβα,
Δ.Κωστόπουλος,
Χ.Λόντος,
Λ.Φύτρο
"Διηλεκτρική
και υπέρυθρη
φασματοσκοπία
μονοκρυστάλλων
και
πολυκρυστάλλων
του ορυκτού
στιλβίτη [Ca4NaAl9Si28O72.3H20]". X
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς Κατάστασης,
18-21 Σεπτεμβρίου 1994,
Δελφοί. pdf
11) Λ.Γ. Φύτρος, Γ. Ι.
Γεωργίου, Μ.
Ποτσίδου και
Χ.Α. Λόντος “ Μελέτη
της
πλεγματικής
ατέλειας [VO2+V] σε
κρυστάλλους Si
με την μέθοδο
της υπέρυθρης
φασματοσκοπίας”.
XVI Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 17-20
Σεπτεμβρίου 2000,
Ναύπλιο. pdf
12) Χ. Α. Λόντος, Μ. Σ.
Ποτσίδη, Λ. Γ.
Φύτρος, Γ. Δ.
Αντωνάρας “Μελέτη
σημειακών
ατελειών σχετιζόμενων
με άνθρακα σε
ακτινοβολημένο
πυρίτιο με την
μέθοδο της
υπέρυθρης
φασματοσκοπίας”.
XVII Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 15-18
Σεπτεμβρίου 2002,
Ηράκλειο,
Κρήτη. pdf
13) Α. Ντόβα, Ι.
Καλογεράς Γ.
Ζαχαρίου, Η.
Χρηστάκης, Μ. Σ.
Ποτσίδη, Χ. Α.
Λόντος,
“Διηλεκτρικές
μετρήσεις
μηχανισμών
χαλάρωσης
φυσικού
ζεολίθου”. XVII
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 15-18
Σεπτεμβρίου 2002,
Ηράκλειο,
Κρήτη. pdf
14) Χ. Α. Λόντος, Γ. Δ.
Αντωνάρας, Χ.
Πανδής, Μ. Σ.
Ποτσίδη, Ε. Στακάκης,
A. Misiuk, V. V. Emtsev “Μελέτη
της επίδρασης
θερμικών δοτών
στη γενική
συμπεριφορά
ατελειών σε
ακτινοβολημένο
πυρίτιο”. XIΧ
Πανελλήνιο Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 21- 24
Σεπτεμβρίου 2003,
Θεσσαλονίκη. pdf
15) M. Ποτσίδη, Χ.
Λόντος, Γ. Δ.
Αντωνάρας, Α.
Ανδριανάκης και
V.V. Emtsev “Eπίδραση του
άνθρακα στην
ιζηματοποίηση
του οξυγόνου
στο Czochralski πυρίτιο”. XΧ
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς
Κατάστασης, 25-26
Σεπτεμβρίου 2004,
Iωάννινα. pdf
16) Χ.Α. Λόντος, Α.
Ανδριανάκης, Γ.
Δ. Αντωνάρας, Ε.Ν.
Σγούρου
“Μελέτη ατελειών
σε
ακτονοβολημένο
Πυρίτιο
Ντοπαρισμένο
με Γερμάνιο με
τη μέθοδο της
υπέρυθρης
φασματοσκοπίας”.
XΧΙΙ
Πανελλήνιο
Συνέδριο
Φυσικής
Στερεάς Κατάστασης
και Επιστήμης
Υλικών, 23-26
Σεπτεμβρίου 2007,
Αθήνα. pdf
17) C.A.Londos, A.Andrianakis, V.Emtsev, H.Ohyama “The effect of germanium
doping on the annealing characteristics of the VO and VO2 defects in silicon”. XΧV
Panhellenic conference on Solid State Physics and Material Science, 20-23
September 2009, Thessaloniki, Greece. pdf
18) E.N. Sgourou, D. Aliprantis, C.A.Londos H.Ohyama “The effect of tin
impurities in the annealing of Vacancy-Oxygen related defects in Czochralski
silicon”. XΧVI Panhellenic conference on Solid State Physics and Material
Science, 26-29 September 2010, Ioannina, Greece. pdf
19) T. Angeletos, C. A. Londos, “A Spectroscopic Study of the CiOi(Si) Absorption Bands upon Isothermal Annealing in Irradiated Silicon at Liquid Helium Temperature (L.H.T.)”. XXI Panhellenic Conference on Solid State Physics and Material Science, 20-23 September 2015, Thessaloniki, Greece. pdf