Charalampos Londos

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Publications, available in pdf format

Articles in magazines

C.N.Koumelis,G.E.Zardas,C.A.Londos and D.K.Leventouri, "Internal strain of GaAs.II Transverse case". Acta Crystall.A32,306 (1976). pdf
2) C.A.Londos and C.N.Koumelis, "An anomaly of the X-Ray spectrum of graphite in the region of the Raman band". Sol.Stat Commun. 31,735 (1979).
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3) C.N.Koumelis and C.A.Londos, "X-Ray Raman scattering in colloidal and polycrystalline graphite". Can.J.Phys.58,1507 (1980).
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4) C.N.Koumelis,C.A.Londos, Z.I.Kavogli, D.K.Leventouri, A.B.Vassilikou and G.E.Zardas, "On a mosaic graphite spectometer without collimators". Can.J.Phys.60,1241 (1982).
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5) A.N.Andriotis and C.A.Londos, "Angular dependence of the X-Ray Raman Scattering from polycrystals". Sol.Stat.Commun.49,213 (1983).
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6) C.A.Londos, "Room temperature irradiation of p-type silicon". phys.stat.sol.(a) 92,609 (1985).
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7) A.B.Vassilikou,J.G.Grammatikakis and C.A.Londos, "Thermally stimulated depolarization currents in LiF+Be2+" J.Phys.Chem.Sol.47, 727 (1986).
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8) C.A.Londos, "Electron irradiation-induced defects in p-type Silicon", J.Phys. Chem. Sol. 47, 1147 (1986).
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9) C.A.Londos,"Charge-dependent defect traces in the DLTS and MCTS spectra of Silicon" phys.stat.sol.(a)96,637 (1986).
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10) C.A.Londos, "Capacitance transient studies of a metastable defect in Silicon" Phys.Rev.B34,1310 (1986).
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11) C.A.Londos and P.C.Banbury, "Defect studies in electron irradiated boron-doped Silicon" J.Phys.C20,645 (1987).
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12) C.A.Londos, "An anomalous feature on the DLTS spectrum of Silicon" Sol.Stat.Commun.62,719 (1987).
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13) C.A.Londos Deep-Level transient spectroscopy studies of the interstitial carbon defect in Silicon" Phys.Rev.B35,6295 (1987).
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14) C.A.Londos, "The divacancy production in low-temperature irradiated Silicon" Phys.Rev.B35,7511 (1987).
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15) C.A.Londos, "Annealing studies of defects pertinent to radiation damage in Si:B" phys.stat.sol.(a)102,639 (1987).
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16) C.A.Londos, "The effect of Oxygen on the migration of the Carbon interstitial defect in Silicon" Phys.Rev.B37,4175 (1988).
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17) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and A.Martens, "Correlation of the concentration of the carbon associated damage levels with the total carbon concentration in Silicon", J.Appl.Phys.63,183 (1988).
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18) V.Hadjicontis,C.A.Londos and K.Eftaxias, "Correlation of the diffusivities of various elements in Silicon", phys.stat.sol.(a)105,K87 (1988).
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19) C.A.Londos, "Some aspects on defects reactions related to the carbon impurity in Silicon" Jap.J.Appl.Phys.27,2089 (1988).
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20) C.A.Londos and J.Grammatikakis, "Notes on the carbon-associated deep level complex in irradiated Si", phys.stat.sol.(a)109,421 (1988).
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21) J.Grammatikakis and C.A.Londos, "Compressibilities of Niobium alloys" J.Phys.Chem.Sol.49,1465 (1988).
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22) C.A.Londos, "Defect states in electron-bombarded n-type Silicon" phys.stat.sol.(a)113,503 (1989).
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23) J.Grammatikakis,C.A.Londos,V.Katsika and N.Bogris, "Migration enthalpy of the cation vacancies in LiF+Be2+", J.Phys.Chem.Sol. 50,845 (1989).
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24) K.Eftaxias,C.A.Londos and Ph.Valianatos, "An alternative treatment of the problem of the image formation of an object through plain interfaces", Am.J.Phys.58,771 (1990).
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25) C.A.Londos,K.Eftaxias and V.Hadjicontis, "Correlation of Solubities of various elements in Silicon", phys.stat.sol.(a)118,K13 (1990).
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26) C.A.Londos, "Carbon-related radiation damage centers and processes in p-type Silicon" Semicond.Sci.Technol.5,645 (1990).
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27) C.A.Londos, "Charge-state-controlled behaviour of the interstitial carbon defects in Czochralski-grown Silicon", J.Phys.Chem.Sol.51, 1301 (1990).
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28) C.A.Londos and T.Pavelka, "DLTS investigation of deep levels in bulk GaAs under uniaxial stress" Semicond.Sci.Techn.5,1100 (1990).
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29) N.Guskos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas, A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos, "EPR measurements on the Cu2+ ions in the high-Tc superconductors MBa2Cu3O7-
δ phys.stat.sol (b) 165,249 (1991). pdf
30) N.Guskos, W.Likodimos, C.A.Londos, Ch.Trikalinos, A.Koufoudakis, C.Mitros, H.Gamari-Seale, D.Niarchos and S.M.Paraskevas "Investigation of the Samarium role in the physical properties of Sm0.5Re0.5Ba2Cu3O7-
δ compounds in the orthorombic and tetragonal structures" Mod.Phys.Let.B 5,969 (1991). pdf
31) N.Guskos, M.Calamiotou, C.A.Londos, V.Likodimos, A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos "Temperature dependence of the EPR spectra of EuBa2Cu3O7-
δ compounds in orthorombic and tetragonal phases", J. Phys. Chem. Sol. 53,211 (1992). pdf
32) C.A.Londos, N.Guskos, J.Grammatikakis, N.Bogris, A.Kyritsis, and A.Papathanassiou, "ITC studies of relaxation phenomena in CaF2:Gd3+ crystals", J.Phys.Chem.Sol. 53,249 (1992).
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33) N.Guskos, C.A.Londos, V.Likodimos, M.Calamiotou, A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos, "EPR studies of the oxygenated and non- oxygenated LaBa2Cu3O7-δ compounds", J.Phys.Condensed Matter 4,4261 (1992). pdf

34) N.Guskos, V.Likodimos, C.A.Londos, W. Windsch, H.Metz, A.Koufoudakis, C.Mitros, H.Gamari-Seale, D.Niarchos, "Low T -dependence of the EPR spectra of Gd0.5Ba2Cu3O7-
δ compounds in tetragonal phase", phys.stat.sol.(b) 170,597 (1992). pdf
35) C.A.Londos, "The production and the evolution of A-centers and Divacancies in Silicon" phys.stat.sol.(a) 132,43 (1992).
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36) C.A.Londos, A.Vassilikou-Dova, G.Georgiou and L.Fytros, "Infrared studies of natural topaz" phys.stat.sol.(a) 133,473 (1992).
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37) C.A.Londos, "Investigation of a new metastable defect in boron-doped Cz-Si." phys.stat.sol.(a) 133,429 (1992).
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38) N.Guskos, V.Likodimos, C.A.Londos, Ch.Trikalinos, S.M.Paraskevas, A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos, " An EPR study of Ceramics Pr0.5Re0.5Ba2Cu3O7-
δ in orthorombic and tetragonal phase", Journal of Superconductivity 5,457 (1992). pdf
39) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and D.Niarchos "Experimental studies of the EuB2-xEuxCu3O7-
δ compound in the tetragonal phase" J.Phys.Condens.Matter 5,229 (1993). pdf
40) C.A.Londos, M.J.Binns, A.R.Brown, S.A.McQuaid and R.C.Newman "Effect of oxygen concentration on the kinetics of thermal donor formation in Silicon at temperatures between 3500C and 5000C", Appl.Phys.Let.62,1525 (1993).
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41) C.A.Londos, "Note on the identity of the Ev+0.34eV level in float-zone Si" J.Appl.Phys.75,645 (1994) 42) C.A.Londos, G.I.Georgiou, L.G.Fytros and K.Papastergiou, "Interpretation of infrared data in neutron-irradiated silicon", Phys.Rev.B 50, 11531 (1994).
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43) S.A.McQuaid, M.J.Binns, C.A.Londos, J.H.Tucker, A.R.Brown and R.C.Newman "The kinitics of oxygen dimer formation in Czochralski Silicon and the effects of preheating in hydrogen gas", J.Appl.Phys 77,1427 (1994).
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44) N.Guskos, V.Likodimos, C.A.Londos, V.Psycharis, C.Mitros, A.Koufoudakis, H.Gamari-Seale, W.Windsch and H.Metz, “Structural, Magnetic and EPR Studies of BaCuO2+x” J.Sol.Stat.Chem. 119,50 (1995). pdf

45) N.Sarlis, G.Kalkanis, C.A.Londos, S.S.Sklavounos and P.Tsakonas, "A calculation of the surface charges and the electric field outside steady current-carrying conductors" Eur.J.Phys. 17, 37 (1996).
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46) C.A.Londos, N.V.Sarlis, L.G.Fytros and K.Papastergiou, “Precursor Defect to the Vacancy - dioxygen center in Si” Phys.Rev. B 53, 6900 (1996).
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47) M.J.Binns, C.A.Londos, S.A.McQuaid, R.C.Newman, N.G.Semaltianos and J.H.Tucker “Novel aspects of oxygen diffusion in Silicon”, J.Mat.Sci: Mat. in Electronics,7, 347 (1996).
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48) N.V.Sarlis, C.A.Londos, L.G.Fytros, “Idendification of Infrared bands in neutron-irradiated Silicon”, J.Appl.Phys 81, 1645 (1997).
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49) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘Isochronal annealing studies of the oxygen-vacancy Centers in neutron irradiated Si’, phys.stat.sol (a) 163, 325 (1997).
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50) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘IR studies of defects formed during postirradiation anneals of Cz-Si’, J.Appl.Phys 84, 3569 (1998).
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51) F.Gaiseanou, D. Tsoukalas, C.A. Londos, J. Stoemenos, C.A. Dimitriadis, J. Esteve, C Postolache and M. Berku, ‘Oxygen related transport phenomena near the polysilicon/SiO2 interface on Silicon during phosphorus diffusion’, Rom. Journ. Phys. 43, 593 (1998).
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52) A. Vassilikou-Dova, I.M. Kalogeras, B. Mecalik and C.A. Londos, ‘Polarising field orientation and thermal treatment effects on the dielectric behavior of fluroapatite’ J.Appl. Phys. 85, 352, (1999).
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53) C.A.Londos, N.V.Sarlis, and L.G.Fytros, ‘A shoulder at 887 cm-1 infrared band in neutron irradiated Si’, J.Appl.Phys 85, 8074 (1999).
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54) C.A.Londos, L.G.Fytros and G.I.Georgiou, ‘IR Studies of Oxygen-Vacancy Related Defects in Irradiated Silicon’, Defect And Diffusion Forum, Vols 171- 172, 1 (1999) (Invited review article) in the journal “Defects and Diffusion in Semiconductors”. An annual retrospective II, Edited by D.J. Fisher SCITEC Publications.
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55) C.A.Londos and L.G.Fytros, ‘Investigation of the two IR bands at 1032 and 1043 cm-1 in neutron irradiated silicon’ J. Appl. Phys. 89, 928 (2001).
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56) V.V. Emtsev Jr, C.A. J. Ammerlaan, B.A. Andreev, V.V. Emtsev, G.A. Oganesyan, A. Misiuk and C.A. Londos ‘Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure’, Journal of Materials Science: Materials in Electronics 12, 223 (2001).
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57) C.A. Londos, I.V. Antonova, M. Potsidou, A. Misiuk, J. Bak-Misiuk and A. K. Gutakovskii “Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions”, J. Appl. Phys. 91, 1198 (2002).
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58) C.A. Londos, M. S. Potsidi, A. Misiuk, J. Ratajczak, V. V. Emtsev, G. Antonaras “Complementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicons” J. Appl. Phys. 94, 4363 (2003).
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59) I. V. Antonova, C. A. Londos, J. Bak-Misiuk, A. K. Gutakovskii, M. S. Potsidi and A. Misiuk. “Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons” phys. stat. sol. (a) 199, 207 (2003).
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60) C.A. Londos, M. S. Potsidi, J. Bak-Misiuk, A. Misiuk, and V. V. Emtsev, “Pressure assisted evoluion of defects in silicon”, Cryst. Res. Technol. 38, 1058 (2003).
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61) L. Bischoff, G. L. R. Mair, C. J. Aidinis, C.A. Londos, Ch. Akhmadaliev and Th. Ganetsos “A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms”, Ultramicroscopy, 100,1 (2004).
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62) C.J. Aidinis, G.L.R. Mair, L. Bischoff, C.A. Londos, Ch Akhmadaliev and Th. Ganetsos “The temperature dependence of the energy distribution of the beam emitted by a Au82Si18 liquid metal field-ion emitter. Nuclear Instruments and Methods in Physics Research B, 222, 627 (2004).
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63) G. L. R. Mair, L. Bischoff, C.A. Londos, Th. Ganetsos, Ch. Akhmadaliev and C. J. Aidinis “An in-depth investigation into the temperature dependence of the mass spectra of the beam produced by Au82Si18 liquid metal field emitter: mechanisms of ion and cluster emission” Appl. Phys. A, 81, 385 (2005).
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64) I.V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A. Bukowski, W. Jung, A. Barcz, “Pressure-induced formation of electrically active centers in irradiated silicon: comparison of electron and neutron irradiation”, Vacuum 77, 507 (2005).
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65) C.A.Londos, G.J.Antonaras, M.S. Potsidi, A. Misiuk, I.V.Antonova and V.V. Emtsev “Production and evolution of defects in neutron-irradiated Si sudjected to termal pre-treatments under hydrostatic pressure”, J. Phys.: Condens. Matter, 17, S2341 (2005).
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66) L.I.Murin, J.L.Lindström, V.P. Markevich, A. Misiuk and C.A.Londos “Termal double donor annihilation and oxygen precipitation at around 650oC in Czohraski-grown Si: local vibrational mode studies”, J. Phys.: Condens. Matter, 17, S2237 (2005).
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67) W.Jung, A Misiuk, C.A Londos, “Pressure stimulated creation of oxygen-related defects in oxygen-implated and neutron-irradiated silicon”, Vacuum 78, 199 (2005).
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68) I.V.Antonova, A.Misiuk, C.A.Londos, “Electrical properties of multiple-layer structures formed by implementation of nitrogen or oxygen and annealed under high pressure” J. Appl. Phys. 99, 033506 (2006).
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69) M.S.Potidi and C.A.Londos, “The CiCs (SiI) defect in silicon: An infrared spectroscopy study” J Appl. Phys. 100, 033523 (2006).
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70) C.A.Londos, G.D.Antonaras, M.S.Potidi, D.N.Aliprantis, A.Misiu, “Infrared absorption spectra of defects in carbon doped neutron-irradiated Si”, J.Mater.Sci.: Mater. Electr., 18, 721 (2007).
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71) C. A. Londos, A. Andrianakis, V. Emtsev and H. Ohyama “Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium”, Semicond. Sci. Technol. 24, 075002 (2009).
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72) C. A. Londos, A. Andrianakis, V. Emtsev, and H. Ohyama “Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing.” J. Appl. Phys. 105, 123508 (2009).
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73) A.Chroneos and C. A. Londos “Interaction of A-centers with isovalent impurities in silicon”, J. Appl. Phys. 107, 093518 (2010).
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74) C. A. Londos, A. Andrianakis,E.N.Sgourou,V. V. Emtsev, and H. Ohyama, “Effect of germanium doping on the annealing characteristics of oxygen and carbon- related defects in Czochralski sSilicon.” J. Appl. Phys. 107, 093520 (2010).
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75) C. A. Londos, A. Andrianakis,E.N.Sgourou,V. V. Emtsev, and H. Ohyama “IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski – Si containing carbon” J. Appl. Phys. 109, 033508 (2011).
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76) A.Chroneos, C. A. Londos, H.Bracht “ A-centers and isovalent impurities in germanium: Density functional theory calculations” Mater. Sci. Engineer. B 176, 453 (2011).
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77) C. A. Londos E. N.Sgourou, A.Chroneos, V. V. Emtsev, Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon" Semicond.
Sci. Technol. 26, 105024 (2011). pdf
78) A. Chroneos, C. A. Londos, E.N. Sgourou, “Effect of tin doping on oxygen and carbon related defects in Czozhralski silicon” J. Appl. Phys. 110, 093507 (2011).
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79) V.V. Voronkov, R. Falster, C. A. Londos, A.Andrianakis E.N. Sgourou, H. Ohyama “ Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities” J. Appl. Phys 110, 093510 (2011).
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80) A. Chroneos, C. A. Londos, E.N. Sgourou, P.Pochet “Point defect engineering strategies to suppress A-center formation in silicon and germanium” Appl. Phys. Let. 99, 241901 (2011).
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81) V.V. Voronkov, R. Falster, C. A. Londos,“ The annealing mechanism of the radiation-induced vacancy-oxygen defects in silicon ” J. Appl. Phys 111, 113530 (2012).
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82) C. A. Londos, D. Aliprantis, E.N. Sgourou, A. Chroneos, P. Pochet, “Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon ” J.Appl. Phys. 111, 123508 (2012).
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83) A. Chroneos, E.N. Sgourou,C. A. Londos, “Interaction of n-type dopants with oxygen in silicon and germanium” J.Appl. Phys. 112, 073706 (2012)
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84) C. A. Londos, E.N. Sgourou, A. Chroneos “Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping:An IR perspective” J.Appl. Phys. 112, 123517 (2012)
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85) E.N. Sgourou, D. Timerkaeva,C. A. Londos, D. Aliprantis, A. Chroneos, D. Caaaaliste, P. Pochet “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si ” J.Appl. Phys. 113, 113506 (2013)
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86) E. N. Sgourou, A. Andrianakis, C. A. Londos, A. Chroneos, “Production and evolution of A-centers in n-type Si1-xGex” J.Appl. Phys. 113, 113507 (2013)
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87) C. A. Londos, E.N. Sgourou, A. Chroneos “Impact of isovalent defect engineering strategies on carbon-related clusters in silicon” J. Mater. Sci.: Mater. Electr. 24, 1696 (2013)
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88) A. Chroneos , E. N. Sgourou, C. A. Londos, “Impact of germanium concentration in the stability of E-centers and A-centers in Si1-xGex ” J. Mater. Sci.: Mater. Electron. 24, 2772 (2013)
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89) C. A. Londos, G. Antonaras, A. Chroneos , “Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon” J. Appl. Phys. 114, 043502 (2013)
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90) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “ A- centers in silicon studied with hybrid density functional theory” Appl. Phys. Lett. 103, 052101 (2013)
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91) C. A. Londos, G. Antonaras, A. Chroneos , “Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon” J. Mater. Sci.: Mater. Electron. 24 , 4328, (2013)
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92) C. A. Londos, E. Sgourou, D. Timerkaaeva, A. Chroneos, P. Pochet, V. V. Emtsev “Impact of isovalent doping on radiation defects in Si” J. Appl. Phys. 114, 113504 (2013)
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93) C. A. Londos, G. Antonaras, A. Chroneos , “ Di-interstitial defect in silicon re visited” J. Appl. Phys. 114, 193513 (2013)
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94) C. A. Londos , E. N. Sgourou, A. Chroneos, , “Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior ” J. Mater. Sci.: Mater. Electron. 25, 914 (2014)
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95) A. Chroneos C. A. Londos , E. N. Sgourou, R. V. Vovk, “ Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint” J. Mater. Sci.: Mater. Electron. 25, 1388 (2014)
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96) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “ Doping strategies to control A- centers in silicon: insights from  hybrid density functional theory  Phys. Chem. Chem  Phys. 16, 8487 (2014) pdf

97) C. A. Londos, E. N. Sgourou, D. Hall, A. Chroneos “Vacancy-oxygen defects in silicon; the impact of isovalent doping” J.Mater. Sci.: Mater. Electron.25, 2395 (2014) pdf

98) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “ Carbon related defects in irradiated silicon revisited” SCIENTIFIC REPORTS 4, 4909 (2014) pdf

99) H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “G-centers in irradiated silicon revisited: A hybrid density functional theory approach” J. Appl. Phys. 115, 183509 (2014) pdf

100) E. N. Sgourou, C. A. Londos, and A. Chroneos, “Vacancy-Oxygen defects in p-type Si1-xGex J. Appl. Phys. 116, 133502 (2014) pdf

101)  C. A. Londos, E. N. Sgourou, A. Chroneos “ Modeling defect reactions processes to study the impact of carbon on the production and the conversion of A-centers in silicon” J Mater Sci: Mater Electron 25, 4872 (2014) pdf

102) C. A. Londos, H. Angeletos, A. Chroneos “Semi-empirical modelling of the di-interstitial defect in silicon” J Mater Sci: Mater Electron 25, 5441 (2014) pdf

103) S.-R.G. Christopoulos, H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou and U. Schwingenschlogl “VV and VO2 defects in irradiated silicon studied with hybrid density functional theory” J Mater Ssi : Mater Electron 26, 1568 (2015) pdf

104) C. A. Londos, H. Angeletos, E. N. Sgourou, A. Chroneos “ Engineering VO, CiOi and CiCs defect in irradiated Si through Ge and Pb doping” J Mater Sci: Mater Electron 26, 2248 (2015) pdf

105) A. Chroneos, E. N. Sgourou, C. A. Londos, U. Schwingenschlogl “Oxygen defect processes in Silicon and Silicon Germanium” Appl. Phys. Rev. 2, 021306 (2015) pdf
106) T. Angeletos, E. N. Sgourou, A. Andrianakis, A. Diamantopoulou, A. Chroneos and C. A. Londos “ Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin” J. Appl. Phys. 118, 015704 (2015)pdf
107) G. Brenet, D. Timerkaeva, E. N. Sgourou and C. A. Londos “ An atomistic vision of the mass Action law: prediction of carbon/oxygen defects in silicon J. Appl. Phys. 118, 125706 (2015) pdf
108) E. N. Sgourou,T. Angeletos, A. Chroneos and C. A. Londos “ Infrared study of defects in Nitrogen-doped electron irradiated silicon” J. Mater. Sci.: Mater Electron. 27, 2054 (2016) pdf
109) S. – R. G. Christopoulos, D. C. Parfitt, E. N. Sgourou, C. A. Londos, R. V. Vork and A. Chroneos “ Controlling A- center concentration in silicon through isovalent doping: Mass action analysis J. Mater. Sci.: Mater Electron. 27, 4385 (2016) pdf
110) T. Angeletos, A. Chroneos and C. A. Londos “ Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals” J. Appl. Phys. 119, 125704 (2016) pdf

Publications at International Conferences

1) G.Ferenczi,C.A.Londos,T.Pavelka,M.Somogyi and A.Martens "Identification of the Carbon associated damage levels in Silicon"14th International Conference on Defects in Semiconductors, 18-22 August, 1986 Paris-France, Edited by H.J. von Bardeleben Trans Tech Publications, Switzerland. Mater. Sci. Forum,Vol.10-12,947 (1986). pdf
2) C.A.Londos "The influence of oxygen on the migration of the carbon interstitial defect in Silicon" Proceedings "Gettering and Defect Engineering in the Semiconductor Technology"-GADEST '87, 9-13 October 1987 Edited by H.Richter Acad. Sci. GDR,Frankfurt (Oder) GDR, p.109 (1987).
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3) C.A.Londos "DLTS investigations of the Carbon-related centers in Si" Proceedings "Gettering and Defect Engineering in the Semiconductor Technology" GADEST '89, 9-13 October 1989, Edited by M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol. 6&7, 443 (1989).
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4) C.A.Londos "Diffusivities and Solubilities of various elements in Si", Proc."Diffusion in Materials", Assuis, France, March 12- 25, 1989, Edited by A.L.Laskar, J.L.Bocquet, G.Brebec and C.Monty, Kluwer Academic Publishers, NATO ASI Series E: Applied Sciences, Vol 179,665 (1990).
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5) C.A.Londos "Observation of a configurationally unstable defect in Si" 16th International Conference on Defects in Semiconductors Bethlehem-USA, 22-26 July 1991, Edited by M.Stavola and G.G.DeLeo Trans Tech Publications, Mater. Sci. Forum, Vol.83-87,351 (1992).
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6) C.A.Londos "A search on the identity of the Ev+0.34eV C-related defect in P-Si" Proceedings "Gettering and Defect Engineering in the Semiconductor Technology" GADEST '91, 13-19 October 1991, Germany, Edited by M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol.19-20,247 (1991).
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7) W.Licodimos, N.Guskos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis, C.Mitros, H.Gamari-Seale, D.Niarchos. "EPR spectrum of Tm(2+) ions in the tetragonal phase of (La,Tm)-Ba-Cu-O compound" International conference on Magnetism, 2-6 September Edinburgh, England,1991. J. Magnet. Magnetic Mater.104-107, 563 (1992).
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8) K.Eftaxias, C.A.Londos and P.Dovas "On the number of repetitive measurements in a laboratory experiment" 1st General Conference of the Balkan Physical Union, 26-28 September 1991, Thessaloniki, Greece, Edited by K.M.Paraskevopoulos, Vol I, 57-59 (1992).
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9) C.A.Londos, A.Vasilikou-Dova, G.Georgiou, L.Fytros "Spectroscopic investigation of natural Topaz" 1st General Conference of the Balkan Physical Union, 26-28 September 1991, Thessaloniki, Greece, Edited by K.M.Paraskevopoulos, Vol II, 956-958 (1992).
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10) N.Gouskos, W.Likodimos, C.A.Londos, S.M.Paraskevas, A.Koufoudakis, C.Mitros, H.Gamari-Seale and D.Niarchos "EPR, XRD and Magnetic measurements of the ceramic YbBa2Cu3O7-
δ in the orthorhombic and tetragonal phase" 1st General Conference of the Balkan Physical Union, 26-28 September 1991, Thessaloniki, Greece, Edited by K.M.Paraskevopoulos, Vol II, 990-992 (1992). pdf
11) H.Richter, K.Schmalz, C.A.Londos "Estimation of Carbon Substtitutional Concentration in Czochralski-grown Silicon by means of Deep-Level Transient Spectroscopy and Infrared Measurements" Third German-Greek Workshop on "Materials Research for Information Technology", Edited by G.Kaiser and N.Constantopoulos, Thessaloniki, 26-27 September 1991. Bilateral Seminars of the International Bureau, Vol.7, 27 (1992).
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12) N.Guskos, V.Likodimos, C.A.Londos, H.Gamari-Seale, A.Koufoudakis and C.Mitros "Zero-field splitting of the ground state of Eu ions in EuBa2Cu3O7-
δ compound with large oxygen deficiency" 26th Congress Ampere on Magnetic Materials, 6-12 September 1992, Athens, Greece. Edited by A.Anagnostopoulos, F.Milia, A.Simopoulos, Athens (1992), p.66. pdf
13) C.A.Londos, S.A.McQuaid, M.J.Binns, R.C.Newman and J.H.Tucker "Effect of oxygen concentration on the kinetics of oxygen loss and thermal donor formation in Silicon at temperatures between 350 oC and 500 oC" Proceedings "Gettering and Defect Engineering in the Semiconductor Technology" GADEST '93, 9-11 October 1993, Edit. by M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol.32-33,161 (1993).
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14) S.A.McQuaid, C.A.Londos, M.J.Binns, R.C.Newman and J.H.Tucker "The kinetics of oxygen loss and Thermal donor formation in Silicon at temperature between 350 oC and 500 oC" 17th International Conference of Defects in Semiconductors, (ICDS-17) 18-24 July 1993, Gmunden-Austria, Edited by W.Jantch, Trans Tech Publications, Switzerland. Mater. Sci. Forum, Vols.143-147, 963 (1994).
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15) C.Newman, M.J.Binns, C.A.Londos, S.A.McQuaid and J.H.Tucker “Oxygen Aggregation Phenomena in Silicon” Proceedings "Gettering and Defect Engineering in the Semiconductor Technology" GADEST '95, 2-7 September 1995, Germany Edited by M.Kittler, Sci-Tech Publications, (Invited) Solid State Phenomena, Vol.47-48, 247 (1996).
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16) C.A.Londos, G.Georgiou, L.G.Fytros and N.Sarlis “New Infrared bands in neutron-irradiated Si” Proceedings "Gettering and Defect Engineering in the Semiconductor Technology" GADEST '95, 2-7 September 1995, Germany Edited by M.Kittler, Sci-Tech Publications, Solid State Phenomena, Vol.47-48, 281 (1996).
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17) C.A.Londos, N.V.Sarlis and L.G.Fytros “An isochronal annealing study of the kinetics of VO and VO2 in neutron - irradiated Si” Proceedings - NATO Advanced Research Workshop - “Oxygen ‘96”. "Early stages of Oxygen Precipitation in Silicon", Exeter, UK 26-29 March 1996 Vol. 17, 477 (1996).
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18) N.V.Sarlis and C.A.Londos “Infrared bands association with multivacancy-oxygen defects in Silicon” CAS ‘96 Proceedings, IEEE, 1996 International Semiconductor Conference, 19th edition October 9-12,1996, Sinaia, ROMANIA. Vol I, 53 (1996).
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19) C.A.Londos, N.V.Sarlis and L.G.Fytros “An IR study of the annealing behaviour of A-center in Silicon” Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘97, 5-10 October 1997,Spa (Belgium) Edited by C.Claeys,J.Vanhellemont,H.Richter and M.Kittler Solid State Phenomena Vols 57-58, 245 (1997).
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20) N.V.Sarlis, C.A.Londos and L.G. Fytros “Correlations of vibrational frequencies with VO4 defect in irradiated Silicon” CAS ‘97 Proceedings, IEEE, 1997 International Semiconductor Conference, 20th edition October 7-11, 1997, Sinaia, ROMANIA, Vol I, 59 (1997).
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21) C.A Londos, N. Guskos, M. Wabia and J. Grybos “General aspects of solar cells and photovoltaic systems (PV) used in Greece” 6th Intern. Symposium on Heat exchange and renewable energy sources, Szczecin-Swinoujcie (POLAND), 7- 9.09.1998, p. 257 (1998) (Invited).
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22) F. Gaisenau, D. Tsukalas, J.Stoimenos, C.A. Dimitriadis, C.A Londos, J. Esteve, C. Postoleche “Atomistic transport phenomena near the polysilicon/SiO2 interface on silicon during the phosphorus diffusion” Abstract No 526 193rd Electrochemical Society meeting, May 3-8, (1998), San Diego.
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23) A. Vassilikou-Dova, B. Macalik, J.M Kalogeras, M. Kalamiotou, C.A. Londos and L.G. Fytros «TSDS probe of anisotropic polarizability in fluroapatite single crystals” Intern. Conf. Eurodim’98, 6-12 July 1998, Keele (U.K) Rad. Eff. Def. Solids 149, 279 (1999).
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24) L.G. Fytros, G. I. Georgiou C.A. Londos and V.V. Emtsev “An infrared investigation of the 887 cm-1 band in Czochralski Silicon” 20th Intern. Conf. On Defects in Semiconductors, 26-30 July 1998,(ICDS-20) Berkley- U.S.A Physica B 273-274, 312 (1999).
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25) V. V. Emtsev Jr, C.A. J. Ammerlaan, B.A Andreev, V.V. Emtsev, G.A. Oganesyan, A. Misiuk, C.A Londos “Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure” Third Intern. Conf. On Materials for Microelectronics, 16-17 October 2000, Ireland, 123 (2000).
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26) A. Misiuk, J. Bak-Misiuk, A. Barcz, A. Romano-Rodriguez, I.V. Antonova, V.P. Popov, C.A. Londos and J. Sun “Effect of annealing at argon pressure up to 1.2 Gpa on hydrogen-plasma etched and hydrogen –implanted single-crystalline Silicon.” Proceedings of the Conf.‘Hydrogen Materials Science and Chemistry of Hydrides, ICHMS’ 99, Katsively, Ukraine 2-8/9/1999. Intern. Journal of Hydrogen Energy, 26, 483 (2001).
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27) C.A. Londos, L. G. Fytros, A. Misiuk, J. Bak-Misiuk, M. Prujsczczy, M. Potsidou “The effect of high pressure-high temperature treatment on neutron irradiation induced defects in Czochralski silicon” Intern. Conf. On Solid State Crystals- Materials Science and Applications (9/10-13/10/2000, Zakopane, Poland (ICSS’ 2000), SPIE Proceedings, 4412, 91 (2001).
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28) V.V. Emtsev Jr, V. V. Emtsev, G.A. Organesyan, A. Misiuk, C.A. Londos “Peculiarities of the thermal donor formation in Czochralski grown silicon under high hydrostatic pressure” Intern. Conf. On Solid State Crystals-Materials Science and Applications (9/10-13/10/2000, Zakopane, Poland (ICSS’ 2000), SPIE Proceedings, 4412, 81 (2001). pdf
29) N. Sarlis, H. Londos, G. Kalkanis “Teaching Transverse (but not Longitudinal?)
Electromagnetic Waves-The Underlying Reasons and an Instructional Approach ” Third International Conference on Science Education Research in the Knowledge Based Society Proceedings, Vol. II, 609 (2001).
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30) J. Bak-Misiuk, C. A. Londos, A. Misiuk, L.G. Fytros, H. B. Surma, J. Trela, K. Papastergiou, J. Domagala “Stress-induced transformation of microdefects in neutron irradiated Czochralski silicon” E-MRS 2000 Proceedings (30/5-2/6/2000, Strasbourg, France) Intern. J. Inorganic Materials, 3, 1307 (2001).
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31) C.A. Londos, M. Potsidou, A. Misiuk, V.V. Emtsev, J. Bak-Misiuk “The effect of high temperature-high pressure treatment on the annealing behavior of VO center in neutron-irradiated Czochralski silicon” 21st Intern. Conf. On Defects in Semiconductors,(ICDS-21) 16-20 July 2001, Giessen- Germany Physica B, 308-310, 313 (2001).
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32) C.A. Londos, M. Potsidou, A. Misiuk and I.V. Antonova “A study of the Conversion of the VO to the VO2 Defect in Heat- Treated Silicon under Stress” Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘01, 30/09-04/10 2001, Catania (Italy) Edited by V.Raineri, H.Richter and M.Kittler Solid State Phenomena Vols 82-84, 249 (2002).
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33) V.V. Emtsev, A. Misiuk, B.A. Andreev, V.V. Emtsev Jr, C.A. Londos, G.A. Oganesyan and D.S. Poloskin “Impact of Compressive Stress on the Formation of Thermal Donors in Heat-Treated Silicon” Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘01, 30/09-04/10 2001, Catania (Italy) Edited by V.Raineri, H.Richter and M.Kittler Solid State Phenomena Vols 82-84, 259 (2002).
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34) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A. Andreev, D.I. Kuritsyn, A. Misiuk, B. Surma and C. A. Londos “Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures” 10th Intern. Conf. on Shallow Levels Centers in Semiconductors (10th SLCS) Warsaw, Poland 24-27 July 2002 phys. stat. sol (b) 235,75 (2003).
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35) V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, A. Misiuk, B. Surma, A. Bukowski, C. A. Londos, M.S. Potsidi “Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon” Intern. Conf. On Solid State Crystals 2002: Materials Science and Applications (14/10-18/10/2002, Zakopane, Poland (ICSS’ 2002), (invited) Cryst. Res. Technol. 38, 394 (2003).
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36) I. V. Antonova, A. Misiuk, C. Londos, B. Surma, S. A. Smagulova, A. Bukowski, W. Jung, A. Barcz “Pressure induced formation of the electrically active centers in electron and neutron irradiated silicon” Proceedings of the 7th Intern. Conf. On Electron Beam Technologies (EBT 2003) (1-6/6/2003), Varna, Bulgaria.
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37) B. Surma, C. A. Londos, V. V. Emtsev, A. Misiuk, A. Bukowski, M.S. Potsidi “Infrared studies of oxygen-related defect formation in neutron- irradiated Cz-silicon after annealing at T=450-650 oC under hydrostatic pressure” E-MRS 2002, spring meeting, Strasbourg, 18-21/6/2002, Strasbourg, France J. Mater. Sci. Engin. B 102, 339 (2003).
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38) C.A. Londos, M. S. Potsidi, and E. Stakakis “Carbon-related complexes in neutron-irradiated silicon” 22nd Intern. Conf. On Defects in Semiconductors,(ICDS-22) 28/7-1/8/ 2003, Aarhus, Denmark Physica B 340-342, 551 (2003).
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39) I. V. Antonova, A. Misiuk, C.A. Londos, A. Barcz, E. N. Vandyshev, J. Bak-Misiuk, K.S. Zhuravlev, M. Kaniewka “Defect- related diffusion of hydrogen in silicon” 22nd Intern. Conf. On Defects in Semiconductors, (ICDS-22) 28/7-1/8/ 2003, Aarhus, Denmark Physica B 340-342, 659 (2003).
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40) V.V. Emtsev, B. A. Andreev, V. Yu Davydov, D. S. Poloskin, G. A. Oganesyan, D. I. Kryzhkov, V. B. Shmagin, V. V. Emtsev, Jr, A. Misiuk and C. A. Londos “Stress-induced changes of thermal donor formation in heat-treated Czochralski grown silicon” 22nd Intern. Conf. On Defects in Semiconductors, (ICDS-22) 28/7-1/8/ 2003, Aarhus, Denmark Physica B 340-342, 769 (2003).
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41) W. Jung, M. Kaniewska, A. Misiuk, C.A. Londos “Study of the defects in oxygen implanted silicon subjected to neutron irradiation and high pressure annealing” Proceedings of the 10th Intern. Conf. of Defects- Imaging and Physics in Semiconductors, DRIP-X 29/9- 2/10/ 2003, Batz-Sur-Mer, Loire Atlantique, France Eur. Phys. J. Appl. Phys. 27, 115 (2004).
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42) C. A. Londos, M.S. Potsidi, A. Misiuk, J. Bak-Misiuk, A. Shalimov and V. V. Emtsev “Investigations of the effect of high pressure on the annealing behavior of oxygen related defects in silicon” Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘03, 21-26/9/2003, Berlin (Germany) Edited by H.Richter and M.Kittler Solid State Phenomena Vols 95-96, 59 (2004).
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43) C. J. Aidinis, L. Bischoff, G. L. R. Mair, C.A. Londos, Th. Ganetsos and Ch. Akhmadaliev “Study of a liquid metal field ion emitter for the production of Si ions” Micro and Nano Engineering Conf. 22-25/09/2003, Cambridge (UK) Microelectronic Engineering Vols 73-74, 116 (2004).
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44) B. Surma, A. Misiuk, A. Wnuk, C. A. Londos, and A. Bukowski ‘Optical studies of defects generated in neutron-irradiated Cz-Si during HP-HT treatment’ International Conference on Solid State Crystals- 7th Polish Conf. on Crystal Growth (ICSSC- 7PCCP), 16/05-20/05/2004, Zakopane, Poland Cryst. Res. Technol. 40, 471 (2005).
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45) C. A. Londos, M. S. Potsidi and V. V. Emtsev ‘Effect of carbon on oxygen precipitation in Czochralski silicon’ 10th International Conference on Extended Defects in Semiconductors, EDS 2004, 11/09-17/09/2004, Chernogolovska, Russia phys. stat. sol (c), 2, 1963 (2005).
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46) A. Misiuk, B. Surma, C. A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska and W. Graeff ‘Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure’ 10th International Conference on Extended Defects in Semiconductors, EDS 2004, 11/09-17/09/2004, Chernogolovska, Russia phys. stat. sol (c), 2,1812 (2005).
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47) L.Bischoff, W.Pilz, Th.Ganetsos, Ch. Akmadaliev, C.J. Aidinis and C.A.Londos ‘On the temperature dependence of the mass spectra of AuGe and AuGeSi liquid metal alloy ion sources’ Second Confedence on Microelectronics, Microsystems and Nanotechnology, 14-17 November 2004, Athens, Greece Journal of Physics: Conference Series 10, 214 (2005).
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48) C.A. Londos, G.D. Antonaras, M.S. Potsidi, A. .Misiuk, V.V. Emtsev ‘The effect of thermal treatments on the annealing behaviour of oxygen-vacancy complexes in irradiated carbon-doped silicon’ Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘05, 21-26/9/2003, Giens (France) Edited by B.Pichaud,,A.Claverie,D.Alquier H.Richter and M.Kittler Solid State Phenomena Vols. 108-109, 205 (2005).
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49) L.I. Murin, J.L. Lindström, B.G. Svenson, V.P. Markervich, A.R. Peaker and C.A. Londos ‘VOn () Defects in Irradiated ans Heat-Treated Silicon’ Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘05, 21- 26/9/2003, Giens (France) Edited by B.Pichaud,,A.Claverie,D.Alquier H.Richter Solid State Phenomena Vols. 108-109, 267 (2005).
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50) J. Bak-Misiuk, A. .Misiuk, B. Surma, A. Shalimov, C.A. Londos ‘Infuence of neutron irradiation on stress-induced oxygen precipitation in Cz-Si’ Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘05, 21-26/9/2003, Giens (France) Edited by B.Pichaud,,A.Claverie,D.Alquier H.Richter Solid State Phenomena Vols. 108- 109, 169 (2005).
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51) V.V. Emtsev, B.A. Andreev, V.V. Emtsev Jr., G.A. Oganesyan, D.I. Kryzhkov, A. Misiuk, C.A.Londos and M.S. Potsidi ‘New donors in Czochralski Grown Silicon Annealed at under Compressive Stress’ Proceedings “Gettering and Defect Engineering in the Semiconductor Technology” GADEST ‘05, 21-26/9/2003, Giens (France) Edited by B.Pichaud, A.Claverie, D.Alquier, H.Richter. Solid State Phenomena Vols. 108-109, 181 (2005).
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52) L.I.Murin, V.P.Markevich,J.L.Lindstrom, C.A.Londos ‘Optically active defects formed upon thermal double donor annihilation in Si’ Proceedings 5th International Conference "High Education Science, Industry, International Cooperation" Edited by V.V.Ponorgadov et al, Minsk, Belarus, 13-15 October 2004, pp111- 114,(2005) (Invited).
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53) W.Jung, A.Misiuk, C.A.Londos, D.Yang, I.V.Antonova, M.Prujszczyk ‘Influence of high pressure annealing on electrical properties of surface layer of neutron irradiated or germanium doped Cz-Si.’ X Seminar of Surface and thin layer structures (17-21) May 2005 Szklarska Poreba, Poland Optica Applicata, 35, 393 (2005).
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54) I.V.Antonova, A. Misiuk, C.A.Londos ‘Electrical characteristics of SOI-Like structures formed in nitrogen or oxygen implanted silicon treated under high pressure’ 12th International Symposium on Silicon-on-Insulator Technology and Devices Edited by G.K. Celler, S. Cristoloveanu, J.G. Fossum, F. Ganiz, K. Izumi, Y.M. Kim, 207th Meeting of the Electrochemical Society (15-20) May pp.325-330 2005, Quebec, Canada Silicon-on-Insulator Technology and Devices XII, DV-2005-03.
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55) I.V.Antonova, A. Misiuk, C.A.Londos ‘Electrical behaviour of SOI-Like structures formed under high pressure in nitrogen or oxygen implanted silicon’ 20th AIRAPT-43rd EHPRG Conference in Karlsruhe (27.06-01.07) 2005. Programme and book of Abstracts p.208, abstract T3-P306.
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56) C.A.Londos, M.S.Potsidi, G.D.Antonaras, A.Andrianakis ‘Isochronal annealing studies of carbon-related defects in irradiated silicon’ 23nd Intern. Conf. On Defects in Semiconductors, (ICDS-23) (25-29) July 2005, Awaji Island, Japan Physica B 376-377, 165 (2006).
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57) A.Misiuk, D.Yang, B.Surma,C.A.Londos, J.Bak-Misiuk, A.Andrianakis ‘Defects in Ge-doped Cz-Si annealed under high stress’ Proceedings of the 11th Intern. Conf. on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-X 15-19 September 2005, Beijing, China Mater. Sci. Semicond. Process. 9, 82 (2006).
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58) A.Misiuk, C.A.Londos, J.Bak-Misiuk, D.Yang, W.Jung, M.Prujszcyk ‘Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz- Si’ E-MRS Proceedings, Symp.U (Si-based Materials for advanced Microelectronics devices: Synthesis, defects, and diffusion), 29/5-2/6/2006, Strasbourg, France Nucl. Instr.Meth.Phys. Res.B, 253, 295, (2006).
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59) A. Misiuk, B. Surma, J. Bak-Misiuk, C.A.Londos, P. Vagovic, I. Kovacevic, B. Pivac,W. Jung, M. Prujszczyk ‘Revealing the radiation-induced effects in silicon by processing at enhanced temperatures- pressures’ 6th European Conference on Luminescent Detectors and Transformers of Ionizing Radiation (LUMDETR 2006) (19-23) June, 2006, Lviv, Ukraine Radiation measurements, 42,689 (2007).
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60) C.A.Londos, A. Andrianakis, D. Aliprantis, H. Ohyama ‘IR studies of oxygen-vacancy defects in electron irradiated Ge-doped Si’ 24rth Intern. Conf. On Defects in Semiconductors, (ICDS-24) 22/7-27/7/ 2007, Albuquerque, New Mexico,USA Physica B 401-402, 487 (2007).
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61) C.A.Londos, G.D. Antonaras, M.S. Potsidi, E.N. Sgourou, I.V. Antonova, A. Misiuk ‘IR studies on the interaction between thermal and radiation defects in Si’ GADEST ’07, 14-19/10/2007, Erice, Italy Edited byA.Cavallini,H.Richter,M.kittler and S.Pizzini Solid State Phenomena 131-133, 351, (2008).
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62) C.A. Londos, A. Andrianakis, V.V. Emtsev, G.A. Oganesyan, H. Ohyama “The effect of germanium doping on the evolution of defects in silicon.” E-MRS Proceedings, Symp.I (Front-end junction and contact formation in future Silicon-Germanium based devices), 26-30/5/2008, Strasbourg, France. Materials Science and Engineering B 154–155, 133–136 (2008).
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63) C.A. Londos,G.D. Antonaras, M.S. Potsidi, A. Misiuk “The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si.” E-MRS Proceedings, Symp.K (Advanced silicon material research for electronic and photovoltaic applications), 26-30/5/2008, Strasbourg, France. Materials Science and Engineering B 159–160, 122–127 (2009).
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64) A. Ide, R.Horiuchi, K. Takakura, M.Yoneoka, H. Ohyama, C.A. Londos, A. Andrianakis, N.Inoue “The production of the defects in electron-irradiated Si1-x Gex crystal evaluated by IR spectroscopy” Extended Abstracts 28th Electronic Material Symposium (EMS-28), 8-10/7/2009, Shiga, Japan.
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65) A.Misiuk, W.Wierzchowski, B.Surma, A.Wnuk, J.Bak-Misiuk, K.Wieteska, A.Barcz, A.Andrianakis, C.A.Londos, D.Yang, M.Prujszczyk, W.Graeff “Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure.”
9th International School and Symposium on Synchrotron Radiation in Natural Sciences (ISSR NS-9) 15-20/6/2009, Ameliowka, Poland Radiation Physics and Chemistry 78, S64–S66 (2009). pdf
66) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, J.Bak-Misiuk, M. Prujszczyk, C.A. Londos, W. Graeff “Thermally induced defects in silicon irradiated with fast neutrons.” 9th International School and Symposium on Synchrotron Radiation in Natural Sciences (ISSR NS-9) 15-20/6/2009, Ameliowka, Poland Radiation Physics and Chemistry 78, S67–S70 (2009).
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67) C.A. Londos, A. Andrianakis, V.V. Emtsev, H. Ohyama “The effect of germanium doping on the behaviour of oxygen and carbon impurities and radiation related defects in silicon” 25th Intern. Conf. on Defects in Semiconductors (ICDS-25) 20- 24/7/2009, St. Petersburg, Russia Physica B 404, 4693 (2009) (Invited).
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68) L.I.Murin, B.G. Svenson, J.L.Lindstrom,V.P.Markevich and C.A.Londos “Trivacancy- oxygen complex in silicon: Local Vibrational Mode characterization.” 25th Intern. Conf. on Defects in Semiconductors (ICDS-25) 20-24/7/2009, St. Petersburg, Russia Physica B 404, 4658 (2009).
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69) C.A. Londos, A. Andrianakis, D. Aliprantis, E.N. Sgourou, V.V. Emtsev, H. Ohyama “The effect of germanium doping on the production of carbon-related defects in electron-irradiated Czochralski silicon.” GADEST ’09 Conference 26/9- 2/10/2009, Berlin, Germany, Edited by M.Kittler and H.Richter Solid State Phenomena 156-158, 187-192, (2010).
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70) A. Andrianakis, C.A. Londos, A. Misiuk, V.V. Emtsev, G.A. Oganesyan, H. Ohyama “The production of vacancy-oxygen defects in electron-irradiated Cz-Si initially treated at high temperature and high pressure” GADEST ’09 Conference 26/9- 2/10/2009, Berlin, Germany, Edited by M.Kittler and H.Richter Solid State Phenomena 156-158, 123-128, (2010).
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71) L.I. Murin, B.G. Svenson, J.L. Lindström,V.P. Markervich, and C.A. Londos “Divacancy- oxygen and trivacancy- oxygen complexes in silicon: Local Vibrational Mode studies.” GADEST ’09 Conference 26/9-2/10/2009, Berlin, Germany, Edited by M.Kittler and H.Richter Solid State Phenomena 156-158, 129-134, (2010).
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72) A. Misiuk, W.Wierzchowski, K.Wieteska, P.Romanowski, C.A. Londos, A.Andrianakis, J.Bak-Misiuk, D.Yang and B.Surma “Defect structure of Nitrogen doped Czochralski Silicon annealed under enhanced pressure” Proceedings of the 8th national meeting of synchrotron Radiation users, 24-26/9/2009, Podlesice,Poland Acta Physica Polonica A 117,34.
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73) A. Misiuk, N.V.Abrosimov, J.Bak-Misiuk, W.Wierzchowski, K.Wieteska,C.A. Londos, J.Kucytoxski “Evaluation of Cz- Si-Ge microstructure after high-temperature- pressure treatment” 10th International workshop on the expert evaluation and control of compound semiconductor materials and technologies, 19-21/5/2010, Darmstadt,Germany (extended abstract).
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74) A. Misiuk, C.A. Londos,, W.Wierzchowski, J.Bak-Misiuk, P.Romanowski, K.Wieteska, E.N.Sgourou, M. Prujszczyk “ Oxygen-related defects in neutron irradiated N-contaning annealed under enhanced- pressure” 3rd International conference on “radiation interaction with materials and its use in technologies 2010” 20-23/9/2010, Kaunas Lithuania TO-16, pp. 60-63 (2010).
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75) C.A. Londos, A. Andrianakis, A.Misiuk “The effect of neutron irradiation on oxygen aggregation processes in Si material treated under hydrostatic pressure” EMRS Conference, Symposium I, ‘Advanced Silicon Materials Research for Electronics and Photovoltaic Applications II, 7-11/6/2010, Strasburg, France Phys. Stat. Solidi (a) 208, 616, (2011).
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76) C.A. Londos, A. Andrianakis, D. Aliprantis, E.N. Sgourou and H. Ohyama “IR studies of oxygen-related and carbon-related defects in Sn-doped Silicon” EMRS Conference, Symposium I, ‘Advanced Silicon Materials Research for Electronics and Photovoltaic Applications II, 7-11/6/2010, Strasburg, France Phys. Stat. Solidi (c) 8, 701, (2011).
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77) D.Kropman, T. Kärner, S. Dolgov, I. Heinmaa, T. Laas, C.A. Londos “Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties” EMRS Conference, Symposium I, ‘Advanced Silicon Materials Research for Electronics and Photovoltaic Applications II, 7-11/6/2010, Strasburg, France Phys. Stat. Solidi (c) 8, 694, (2011).
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78) C.A. Londos, E.N.Sgourou, A. Andrianakis, A. Misiuk, V.V. Emtsev, H. Ohyama “IR studies of VOn, CiOi, and CiCs defects in Ge-doped Cz-Si ” GADEST ’11 Conference 25 – 30/9//2009, Loipersdorf, Austria, Solid State Phenomena 178-179, 147 (2011).
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79) A. Misiuk, J. Bak-Misiuk, B. Surma, W. Wierzchowski, K. Wieteska, C.A. Londos, N.V. Abrosimov, and J. Kucytowski “Impact of Hydrostatic Pressure Applied at Annealing on Homogeneity of Si-Ge Single Crystals” Solid State Phenomena 178-179, 35 (2011).
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80) D.Kropman, E.Mellikov, T. Kärner, I. Heinmaa, T.Laas, C.A. Londos, A.Misiuk “Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties, Solid State Phenomena 178-179, 263 (2011).
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Publications at Greek Conferences

1) Χ.Λόντος, "Μελέτη σημειακών ατελειών στο πυρίτιο με τη μέθοδο της φασματοσκοπίας βαθέων σταθμών", IV Πανελλήνιο Συνέδριο Φυσικής, 18-22 Δεκεμβρίου 1986, Αθήνα. pdf
2) Ι.Γραμματικάκης, Χ.Λόντος, Β.Κατσίκα και Ν.Μπόγρης "Μέτρηση παραμέτρων σημειακών ατελειών LiF+Be2+" IV Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 20-23 Σεπτεμβρίου 1988, Μαραθώνας, Αττική. pdf
3) Ν.Γκούσκος, Ι.Γραμματικάκης, Χ.Λόντος, Ν.Μπόγρης και Α.Κυρίτσης "Μια νέα εξήγηση φαινομένων αποκατάστασης σε κρυστάλλους CaF:Gd3+", V Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 19-23 Σεπτεμβρίου 1989, Ξάνθη. pdf
4) Ν.Γκούσκος, Α.Κοντός, Χ.Λόντος, Σ.Μ.Παρασκευάς, Α.Κουφουδάκης, Χ.Μήτρος, Ε.Γκάμαρη-Seale και Δ.Νιάρχος "Επίδραση του επιδερμικού φαινομένου στο φάσμα EPR του ιόντος Cu στο υλικό Pr0.5Y0.5Ba2Cu3O7-δ". VI Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 26-29 Σεπτεμβρίου 1990, Ηράκλειο, Κρήτη. pdf
5) Β.Λυκοδήμος, Ν.Γκούσκος, Χ.Λόντος, Σ.Παρασκευάς, Α.Κουφουδάκης, Χ.Μήτρος, Ε.Γκαμαρη-Seale και Δ.Νιάρχος "EPR μελέτη του πολυκρυσταλλικού συστήματος (La,Nd) Ba Cu O στην τετραγωνική δομή". VII Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 22-25 Σεπτεμβρίου 1991, Θεσσαλονίκη. pdf
6) Ν.Γκούσκος, Χ.Λόντος, Β.Λυκοδήμος, Σ.Παρασκευάς, Α.Κουφουδάκης, Χ.Μήτρος, Ε.Γκαμαρη-Seale και Δ.Νιάρχος "Χρήση Φασματοσκοπίας EPR για τον ποιοτικό έλεγχο υπεραγωγών Gd-Ba-Cu-O". VII Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 22-25 Σεπτεμβρίου 1991, Θεσσαλονίκη. pdf
7) Ν.Γκούσκος, Χ.Λόντος, Β.Λυκοδήμος, Α.Κουφουδάκης, Χ.Μήτρος, Ε.Γκαμαρη-Seale και Δ.Νιάρχος "EPR και μαγνητική μελέτη του συστήματος Eu-Ba-Cu-O στην τετραγωνική δομή" VIII Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 22-25 Σεπτεμβρίου 1992, Ιωάννινα. pdf
8) Χ.Λόντος "Η επίδραση του Οξυγόνου στην κινητική σχηματισμού θερμικών δοτών στο πυρίτιο". IX Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 27-29 Σεπτεμβρίου 1993, Πάτρα. pdf
9) Χ.Λόντος, Λ.Φύτρος, Γ.Γεωργίου και Κ.Παπαστεργίου "Μελέτη ατελειών σε κρύσταλλο Si ακτινοβολημένο με νετρόνια με τη μέθοδο της υπέρυθρης φασματοσκοπία". X Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 18-21 Σεπτεμβρίου 1994, Δελφοί. pdf
10) Ι.Καλογεράς, Α.Βασιλικού-Ντόβα, Δ.Κωστόπουλος, Χ.Λόντος, Λ.Φύτρο "Διηλεκτρική και υπέρυθρη φασματοσκοπία μονοκρυστάλλων και πολυκρυστάλλων του ορυκτού στιλβίτη [Ca4NaAl9Si28O72.3H20]". X Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 18-21 Σεπτεμβρίου 1994, Δελφοί. pdf
11) Λ.Γ. Φύτρος, Γ. Ι. Γεωργίου, Μ. Ποτσίδου και Χ.Α. Λόντος “ Μελέτη της πλεγματικής ατέλειας [VO2+V] σε κρυστάλλους Si με την μέθοδο της υπέρυθρης φασματοσκοπίας”. XVI Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 17-20 Σεπτεμβρίου 2000, Ναύπλιο. pdf
12) Χ. Α. Λόντος, Μ. Σ. Ποτσίδη, Λ. Γ. Φύτρος, Γ. Δ. Αντωνάρας “Μελέτη σημειακών ατελειών σχετιζόμενων με άνθρακα σε ακτινοβολημένο πυρίτιο με την μέθοδο της υπέρυθρης φασματοσκοπίας”. XVII Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 15-18 Σεπτεμβρίου 2002, Ηράκλειο, Κρήτη. pdf
13) Α. Ντόβα, Ι. Καλογεράς Γ. Ζαχαρίου, Η. Χρηστάκης, Μ. Σ. Ποτσίδη, Χ. Α. Λόντος, “Διηλεκτρικές μετρήσεις μηχανισμών χαλάρωσης φυσικού ζεολίθου”. XVII Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 15-18 Σεπτεμβρίου 2002, Ηράκλειο, Κρήτη. pdf
14) Χ. Α. Λόντος, Γ. Δ. Αντωνάρας, Χ. Πανδής, Μ. Σ. Ποτσίδη, Ε. Στακάκης, A. Misiuk, V. V. Emtsev “Μελέτη της επίδρασης θερμικών δοτών στη γενική συμπεριφορά ατελειών σε ακτινοβολημένο πυρίτιο”. XIΧ Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 21- 24 Σεπτεμβρίου 2003, Θεσσαλονίκη. pdf
15) M. Ποτσίδη, Χ. Λόντος, Γ. Δ. Αντωνάρας, Α. Ανδριανάκης και V.V. Emtsev “Eπίδραση του άνθρακα στην ιζηματοποίηση του οξυγόνου στο Czochralski πυρίτιο”. XΧ Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης, 25-26 Σεπτεμβρίου 2004, Iωάννινα. pdf
16) Χ.Α. Λόντος, Α. Ανδριανάκης, Γ. Δ. Αντωνάρας, Ε.Ν. Σγούρου “Μελέτη ατελειών σε ακτονοβολημένο Πυρίτιο Ντοπαρισμένο με Γερμάνιο με τη μέθοδο της υπέρυθρης φασματοσκοπίας”. XΧΙΙ Πανελλήνιο Συνέδριο Φυσικής Στερεάς Κατάστασης και Επιστήμης Υλικών, 23-26 Σεπτεμβρίου 2007, Αθήνα. pdf

17) C.A.Londos, A.Andrianakis, V.Emtsev, H.Ohyama “The effect of germanium doping on the annealing characteristics of the VO and VO2 defects in silicon”. XΧV Panhellenic conference on Solid State Physics and Material Science, 20-23 September 2009, Thessaloniki, Greece.
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18) E.N. Sgourou, D. Aliprantis, C.A.Londos H.Ohyama “The effect of tin impurities in the annealing of Vacancy-Oxygen related defects in Czochralski silicon”. XΧVI Panhellenic conference on Solid State Physics and Material Science, 26-29 September 2010, Ioannina, Greece.
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19) T. Angeletos, C. A. Londos, “A Spectroscopic Study of the CiOi(Si) Absorption Bands upon Isothermal Annealing in Irradiated Silicon at Liquid Helium Temperature (L.H.T.)”. XXI Panhellenic Conference on Solid State Physics and Material Science, 20-23 September 2015, Thessaloniki, Greece. pdf