National and Kapodistrian University of Athens Semiconductor and Microsystems Laboratory Solid State Physics Section Department of Solid State Physics Department of Solid State Physics, Faculty of Physics, University of Athens University of Athens, School of Science, Faculty of Physics, Department of Solid State Physics, Contact, Maps Penepistimiopolis Zografos, Athens 15784 | Phone: +30 210 7276-722 | Fax: +30 210 7276-711 Semiconducting Materials Semiconductor Devices MEMS Nanocomposites Reliability     Materials and     Transport parameters     Point defects     Dielectric films Semiconducting materials Point defects This research activity aims to determine the presence and characteristics of point defects in *   Bulk III-V semiconductors *   Epitaxial III-V semiconductors *   Silicon On Insulator (SOI) films *   Thin film polycrystalline Si *   2-D electron gas heterostructure structures based on III-V and III-N and dilute nitride semiconductors *   III-V, N-V, SOI and polycrystalline Si semiconductor devices *   Radiation induced point and complex defects Experimental setup The assessment of point defects is achieved with    Deep-Level-Tran- sient-Spectroscopy (DLTS) method. The setup is  based on a computer controlled Boxcar averager that monitors simultaneously 8 rate windows, stores the transients and the steady state value every 0.5 K. The setup allows the recording of capacitance transients (C-DLTS), current transients (I-DLTS) as well as the Photo-Induced- Capacitance/Current transients (PICTS) with the aid of LED and Laser optical sources. In deails the expermental setup consists of: *   Keithley 487 pico-Amperemeter for the current-voltage (I-V) characterization of P-N and Schottky junctions *   Boonton 72B capacitance meter for C- DLTS and Capacitance-Voltage characterization *   Current amplifier with gain ranging from 10² to 10⁷ V/A for I-DLTS *   Boxcar averager based on a National Instruments DAQ card that allows the simultaneous recording of 8 rate windows and steady state value at any temperatu-re *   Liquid Nitrogen Biorad cryostat with temperature controller that allows sample assessment in the temprature range of 90K to 450K *   West Temperature controller with controlled temperature ramp rate from 0.5 K/min to 100 K/min. *   All measurements are computer controlled with Labview software.                       DLTS setup Biorad cryostat with sample in DIL ceramic package and LED