National and Kapodistrian University of Athens Semiconductor and Microsystems Laboratory Solid State Physics Section Department of Solid State Physics Department of Solid State Physics, Faculty of Physics, University of Athens University of Athens, School of Science, Faculty of Physics, Department of Solid State Physics, Contact, Maps Penepistimiopolis Zografos, Athens 15784 | Phone: +30 210 7276-722 | Fax: +30 210 7276-711 Semiconducting Materials Semiconductor Devices MEMS Nanocomposites Reliability     Materials and     Transport parameters     Point defects     Dielectric films Semiconductor devices Device research Aim of this activity is to investigate the electrical proper-ties of semiconductor devices. The research is focused on: *   Silicon On Insulator (SOI) MOSFETs *   Thin Film Transistors fabricated on polycrystalline Si *   2-D and 3-D electron gas devices based on III-V and III- N semiconductors The parameters tested are: *   Current-Voltage characteristics above and below thresshold *   g_m dispersion *   Distribution of point and interface defects with the aid of drain current transient spectroscopy (DLTS and PICTS) *   Backgating effect and substrate current *   Optoelectronic properties in the range of 190 nm to 3200 nm *   Optical backgating dependence on illumination wavelength and intensity *   Drain current noise spectrum *   All assessment performed  in the temperature range of 20 K to 330 K or 90 K to 450 K Experimental setup The experimental setup consists of: *  SR785 signal analyser with SR570 low noise current amplifier for drain current noise measurements *  Keithley 6485, 6487 and 6517A pico-Amperemeters for the current-voltage  characterization *  Device test fixture with DIL-28 zero force socket on PTFE base for high isolation. Packaged devices are access with 4 triax, two floating and 2 grounded BNC sockets. *  PAR 124 Lock-In Amplifier, 0.2 Hz to 200 KHz, for transconductance dispersion and AC impedance assessment *  Oriel 12.5 cm focal length monochromator with gratings and filters to cover the range of 190 nm to 3200 nm for optoelectronic properties assessemnt. *  I-DLTS setup *  Probe station with Cascade micromanipulators in dark box for on wafer assessment *  Cascade Microtech RF-1 probe station with Pico- Probe CPW probes *  Aeroflex 2397 spectrum analyser with tracking generator, *  HP bias-T networks *  Return-loss bridges for rf-assessment up to 3 GHz. *  All measurements are computer controlled with Labview software.                       Signal analyser with current                       amplifier and device test fixture Probe station with dark box Cascade Microtech RF-1 probe station