Athanassios A. Tsekouras

[cv in Greek]
University of Athens
Department of Chemistry
Laboratory of Physical Chemistry
Athens, GR-15771, GREECE
Tel.: +30-2107274518
Fax: +30-2107274755
Electronic mail: thanost@chem.uoa.gr

Education

1987-1992 Stanford University, Stanford, California, U. S. A.
Ph. D. in Chemical Physics (1992).
1982-1986 National and Capodistrian University of Athens, Athens, Greece.
B. S. in Chemistry (1987).

Professional Career

1997-present
Assistant professor of Chemistry, National and Capodistrian University of Athens
1996-1997 Postdoctoral Research
Advisor: Dr. J. P. Cowin, Pacific Northwest National Laboratory.
Project: Ion-surface reaction dynamics of thin films.
Ion mobility in thin films of hexane and water grown on Pt and the dielectric properties of these substrates are studied as a function of sample history and temperature by monitoring surface voltages with an oscillating electrode (Kelvin probe).

1992-1996 Postdoctoral Research
Advisor: Prof. S. T. Ceyer, Massachusetts Institute of Technology.
Project: Gas-surface reaction dynamics of fluorine and xenon difluoride on a silicon crystal.
The etching reactions of Si by F2 were studied using an ultra-high vacuum scattering machine equipped with a rotatable mass spectrometer. A new reaction mechanism was observed and Si etching with fast F2 beams was demonstrated. Similar studies of Si etching with XeF2 revealed the ejection of fast XeF and very fast F fragments during the early stages of the reaction.

1987-1992 Doctoral Research
Advisor: Prof. R. N. Zare, Stanford University
Project: Reaction dynamics of the reaction Ba + HI -> BaI + H.
Product rotational distributions were determined by laser induced fluorescence and combined with reagent relative velocity data to provide information on the impact parameter of the reagents that yielded product molecules in specific vibrational states. Studies were done under crossed beam and beam - gas conditions.

1983-1986 Undergraduate Research
Advisor: Prof. C. E. Efstathiou, National University of Athens
Project: Developed hardware and software to interface titration and stripping voltammetry equipment to microcomputer.

Advisor: Prof. P. Macheras, National University of Athens
Project: Worked on an educational computer program presenting the concept of bioavailability of drugs.

Honors

1983, 1984, 1985
Scholarship for Academic Achievement, N. U. of Athens.

Technical Expertise

Teaching Experience

Faculty teaching (University of Athens) Teaching Assistantships, Stanford University (Quarterly appointments)

Other Experience

1986-1987 Military service in the Greek Navy.

Languages

Greek, English, German, French.

Publications

  1. "Laser spectroscopy of crossed molecular beams: The dissociation energy of BaI from energy-balance measurements", P. H. Vaccaro, D. Zhao, A. A. Tsekouras, C. A. Leach, W. E. Ernst, and R. N. Zare, J. Chem. Phys. 93, 8544 (1990).
  2. "Analysis of BaI C2P-X2S+(0,0) Band for High Rotational Levels", D. Zhao, P. H. Vaccaro, A. A. Tsekouras, C. A. Leach, and R. N. Zare, J. Mol. Spectrosc. 148, 226 (1991).
  3. "Indirect information on reactive transition states from conservation of angular momentum", C. A. Leach, A. A. Tsekouras, P. H. Vaccaro, R. N. Zare, and D. Zhao, Faraday Discuss. Chem. Soc., 91, 183 (1991).
  4. "Experimental determination of the specific opacity function for the Ba + HI ® BaI(v=0) + H reaction", P. H. Vaccaro, A. A. Tsekouras, D. Zhao, C. A. Leach, and R. N. Zare, J. Chem. Phys. 96, 2786 (1992).
  5. "Rotational analysis of the BaI C2P-X2S+ band system for the Dv=0 progression (v=0-12)", C. A. Leach, A. A. Tsekouras, and R. N. Zare, J. Mol. Spectrosc. 153, 59 (1992).
  6. "Product rotational distributions and specific opacity functions for the reaction Ba + HI ® BaI (v=0,4,8,12,16,18) + H ", A. A. Tsekouras, C. A. Leach, K. S. Kalogerakis, and R. N. Zare, J. Chem. Phys. 97, 7220 (1992).
  7. "Experimental verification of a new mechanism for dissociative chemisorption: Atom abstraction", Y. L. Li, D. P. Pullman, J. J. Yang, A. A. Tsekouras, D. B. Gosalvez, K. B. Laughlin, Z. Zhang, M. T. Schulberg, D. J. Gladstone, M. McGonigal and S. T. Ceyer, Phys. Rev. Lett. 74, 2603 (1995).
  8. "Ion beam source for soft-landing deposition", J. P. Biesecker, G. B. Ellison, H. Wang, M. J. Iedema, A. A. Tsekouras, and J. P. Cowin, Rev. Sci. Instrum. 69, 485 (1998).
  9. "Soft-landed Ions: A route to Ionic Solution Studies", A. A. Tsekouras, M. J. Iedema, G. B. Ellison, J. P. Cowin, Int. J. Mass Spectrom. Ion Procecces 174, 219 (1998).
  10. "Amorphous water ice relaxations measured with soft-landed ions", A. A. Tsekouras, M. J. Iedema, and J. P. Cowin, Phys. Rev. Lett. 80, 5798 (1998).
  11. "Ferroelectricity in Water Ice", M. J. Iedema, M. J. Dresser, D. L. Doering, J. B. Rowland, W. P. Hess, A. A. Tsekouras, and J. P. Cowin, J. Phys. Chem. B 102, 9203 (1998).
  12. "Immobility of protons in ice from 30 to 190 K", J. P. Cowin, A. A. Tsekouras, M. J. Iedema, K. Wu & G. B. Ellison, Nature 398, 405 (1999).
  13. "Soft-landed ion diffusion studies on vapor-deposited hydrocarbon films", A. A. Tsekouras, M. J. Iedema, and J. P. Cowin , J. Chem. Phys. 111, 2222 (1999).
  14. "Fluorine atom abstraction by Si(100). I. Experimental", M. R. Tate, D. Gosalvez-Blanco, D. P. Pullman, A. A. Tsekouras, Y. L. Li, J. J. Yang, K. B. Laughlin, S. C. Eckman, M. F. Bertino, and S. T. Ceyer, J. Chem. Phys. 111, 3679 (1999).
  15. "Probing aqueous-organic interfaces with soft-landed ions", K. Wu, M. J. Iedema, A. A. Tsekouras, and J. P. Cowin, Nucl. Instr. and Meth. in Phys. Res. B 157, 259 (1999).
  16. "Fluorine atom abstraction by Si(100). II. Model", M. R. Tate, D. P. Pullman, Y. L. Li, D. Gosalvez-Blanco, A. A. Tsekouras, and S. T. Ceyer, J. Chem. Phys. 112 5190 (2000).
  17. "Reactivity of Fluorinated Si(100) with F2", D. P. Pullman, A. A. Tsekouras, Y. L. Li, J. J. Yang, M. R. Tate, D. B. Gosalvez, K. B. Laughlin, M. T. Schulberg, and S. T. Ceyer, J. Phys. Chem. B 105 486 (2001).
  18. "Comment on "Connecting thermodynamics to students' calculus," by Joel W. Cannon [Am. J. Phys. 72(6), 753-757 (2004)]", A. A. Tsekouras, Am. J. Phys. 72 1367 (2004).
  19. "Sticky Ice Grains Aid Planet Formation: Unusual Properties of Cryogenic Water Ice", H. Wang, R. C. Bell, M. J. Iedema, A. A. Tsekouras, and J. P. Cowin, Astrophys. J. 620 1027 (2005).
  20. All Electron First Principles Calculations of the Ground and Some Low-Lying Excited States of BaI, E. Miliordos, A. Papakondylis, A. A. Tsekouras, and A. Mavridis, J. Phys. Chem. A 111, 10002 (2007)
  21. The electron affinity of gallium nitride (GaN) and digallium nitride (GaNGa): The importance of the basis set superposition error in strongly bound systems", D. Tzeli and A. A. Tsekouras, J. Chem. Phys. 128, 144103 (2008)
  22. "Mind the Basis Set Superposition Error", D. Tzeli and A. A. Tsekouras, Chem. Phys. Lett. 496, 42-45 (2010)

Presentations

(Update: 25 October 2015)