Charge Tranport, Thermodynamics, Electronic structure

Articles ... Books ...

Principal thermodynamic properties of quasi two-dimensional carriers under in-plane magnetic field
C. Simserides*
Journal of Physics: Condensed Matter 21 (2009) 015304 (6pp)
doi: 10.1088/0953-8984/21/1/015304

The Density of States and the pertinent Electronic Properties of the quasi 2DEG in Simple and DMS structures subjected to an in-plane magnetic field
C. Simserides*
Journal of Computational Electronics 2 (2003) 459-463
doi: 10.1023/B:JCEL.0000011471.69323.17
Proceedings of IWCE-9 (9th International Workshop on Computational Electronics)

The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field
C. D. Simserides*
Journal of Physics: Condensed Matter 11 (1999) 5131-5141
doi: 10.1088/0953-8984/11/26/314

Low-Dimensional Carriers Under In-Plane Magnetic Field: Novel Phenomena
C. Simserides, A. Zora, G.P. Triberis.
Nova Science Publishers, New York (www.novapublishers.com) ~ 180 pages, 8 chapters
Series: Condensed Matter Research and Technology
Pub. Date: 2010, Pages: 7 x 10. COB, 165 pp. 8 chapters
Binding: Hardcover ISBN: 978-1-61668-141-8
Binding: ebook ISBN: 978-1-61470-196-5

Quantum Wells: Theory, Fabrication and Applications, 
Nova Science Publishers, New York (www.novapublishers.com). 
Editors: Alfred Ruyter and Harper O'Mahoney, 
Pub. Date: 2009, Pages: pp.540
Binding: Hardcover, ISBN: 978-1-60692-557-7
Binding: ebook, ISBN: 978-1-61470-723-3 
Chapter: “Quantum wells under in-plane magnetic field: Density of states and novel phenomena in thermodynamic properties, magnetization and spin-polarization”, Pages 37, author: C. Simserides*

Ph.D. Thesis in Physics, Physics Department, University of Athens, 29 April 1996. 
Thesis: "Electronic properties and mobility of selectively doped heterostructures 
AlxGa1-xAs/GaAs/AlxGa1-xAs"

Δείτε την στο Εθνικό Αρχείο Διδακτορικών Διατριβών (Σιμσερίδης)
Have a look at it in the National Archive of Ph.D. Theses (Σιμσερίδης)


Electron scattering by optical phonons in AlxGa1–xAs/GaAs/AlxGa1–xAs quantum wells
X. Zianni, C. D. Simserides and G. P. Triberis
Physical Review B 55 (1997) 16324-16330
doi: 10.1103/PhysRevB.55.16324

Looking for the maximum low-temperature conductivity in selectively-doped AlxGa1-xAs-GaAs-AlxGa1-xAs double heterojunctions
C. D. Simserides and G. P. Triberis
Journal of Physics: Condensed Matter 8 (1996) L421-L426
doi: 10.1088/0953-8984/8/30/002

A study on the temperature dependence of the quasi-two-dimensional electron concentration and mobility in AlxGa1-xAs/GaAs selectively doped heterostructures
C. D. Simserides and G. P. Triberis
J. Phys.: Condens. Matter 7 (1995) 6317-6326
doi: 10.1088/0953-8984/7/31/014

On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures
C. D. Simserides and G. P. Triberis
Superlattices and Microstructures 14 (1993) 277-282
doi: 10.1006/spmi.1993.1139
Proceedings of ICSMM-7 (7th International Conference on Superlattices, Microstructures and Microdevices)

Comments on the efficiency of Selectively-Doped Double-Heterojunction Structures
C. D. Simserides and G. P. Triberis
Physica Status Solidi B 184 (1994) K49-K52
doi: 10.1002/pssb.2221840234

A systematic study of electronic states in n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs selectively-doped double-heterojunction structures
C. D. Simserides and G. P. Triberis,
Journal of Physics: Condensed Matter 5 (1993) 6437-6446
doi: 10.1088/0953-8984/5/35/009



Proceedings ...

Spin-polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states
C. Simserides*
Journal of Physics: Conference Series 10 (2005) 143–146 (with referee)
doi: 10.1088/1742-6596/10/1/035 
Proceedings of the 2nd Conf. on Microelectronics, Microsystems and Nanotechnology 2004

Temperature dependent magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states
C. Simserides*
AIP Conference Proceedings 772 (2005) 341-342
doi: 10.1063/1.1994128
ICPS27 (27th International Conference on the Physics of Semiconductors) proceedings published by AIP 

Magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states
C. Simserides*
International Journal of Modern Physics B 18 (2004) 3745-3748 (with referee) 
doi: 10.1142/S0217979204027384
Proceedings of SEMIMAG16 (16th Internat. Conference on High Magnetic Fields in Semiconductor Physics)

Conduction band narrow to wide Diluted Magnetic Semiconductor layers under in-plane magnetic field: not step-like Density of States and consequences
C. Simserides*
Proceedings of MSS11 (2003) p.299 (booklet version)
(11th International Conference on Modulated Semiconductor Structures, Nara, Japan, 14-18 July 2003)

Changing the density of states and the magnetoresistance of double heterojunctions by an in-plane magnetic field, 
V. Piazza, C. Simserides, W. Wegscheider and F. Beltram: 
Advanced Materials for Industrial Applications. International summer school organized by the Physics Dept. of the Aristotle University of Thessaloniki, Kavala (20-27/6/1999)

Some older talks and posters follow:
Talk: “Two-dimensional carriers under in-plane magnetic field: novel phenomena”
NN09 Simserides TALK 13 JULY 2009

Talk: "Spin-polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states"
SIMSERIDES 17 NOV 2004 TALK MMN2004 

Poster: " Temperature dependent magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states" 
SIMSERIDES ICPS27 POSTER 

Poster: "Magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states"
SIMSERIDES SEMIMAG16 POSTER 


Electronic properties of n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs double heterojunctions
C. D. Simserides and G. P. Triberis
Proceedings of the 4th-ICFSI, World Scientific Publishing, London, England (1993) (4th International Conference on the Formation of Semiconductor Interfaces, 14-18/6/1993, Julich, Germany)