Properties of quasi two-dimensional carriers subjected to in-plane magnetic field.


A26)Principal thermodynamic properties of quasi two-dimensional carriers under in-plane magnetic field”

         C. Simserides*

J. Phys.: Condens. Matter 21 (2009) 015304 (6pp)     doi: 10.1088/0953-8984/21/1/015304


A12)The Density of States and the pertinent Electronic Properties of the quasi 2DEG in Simple and DMS structures subjected to an in-plane magnetic field”

         C. Simserides*

         Journal of Computational Electronics 2 (2003) 459-463     doi: 10.1023/B:JCEL.0000011471.69323.17

         Proceedings of IWCE-9 (9th International Workshop on Computational Electronics)


A7)  “The density of states and the electron concentration of a double-heterojunction system subjected to an in-plane magnetic field”

C. D. Simserides*

J. Phys.: Condens. Matter 11 (1999) 5131-5141     doi: 10.1088/0953-8984/11/26/314




B2)   BOOK:

"Low-Dimensional Carriers Under In-Plane Magnetic Field: Novel Phenomena"

C. Simserides, A. Zora, G.P. Triberis.

Nova Science Publishers, New York (www.novapublishers.com)

~ 180 pages, 8 chapters

Series: Condensed Matter Research and Technology

Pub. Date: 2010, Pages: 7 x 10. COB, 165 pp. 8 chapters

Binding: Hardcover   ISBN: 978-1-61668-141-8

Binding: ebook   ISBN: 978-1-61470-196-5

Book Description:

Under the influence of different external stimuli condensed matter reveals its magnificent properties. The electric field, the temperature, the concentration gradients and the light are the basic ``forces'' responsible for processes such as the electrical, the thermal, the diffusion transport or optical phenomena. The action of the magnetic field brings about the galvanomagnetic or the thermomagnetic effects.


New alloy semiconductors and the development of artificial semiconductor heterostructures led to the confinement of carriers in two, one or zero dimensions, opening a new window in condensed matter research.


The application of a perpendicular magnetic field upon two-dimensional carriers, led to the discovering of astonishing phenomena, namely, the integer or the fractional quantum Hall effects and inspired radical theoretical interpretations.


The reduced symmetry of low dimensional structures enhances decisively the role of the magnetic field orientation, bringing to light novel and unexpected phenomena. In the present book the effect of the application of an in-plane magnetic field upon low dimensional carriers, giving rise to impressive novel phenomena, is presented and discussed.


Specifically, whenever a quantum well is subjected to an in-plane or tilted magnetic field, the elegant concept of Landau levels must be modified, because the carriers move under the competing influence of the Lorentz force and the force due to the quantum well confining potential. Under these conditions, the equal-energy surfaces or equivalently, the density of states (DOS), are qualitatively and quantitatively modified. The DOS diverges significantly from the ideal step-like two-dimensional carrier form.


The book discusses various physical properties which are affected by the DOS modification.

 

Contents

 

Introduction vii

 

1 Quantum Mechanics and Thermodynamics of Quasi Two-Dimensional Carriers

under In-Plane Magnetic Field 1

1.1 Basics 1

1.2 Electron kinetics 5

1.3 The density of states 6

1.4 Thermodynamic properties and carrier concentration 7

1.5 The case of the single quantum well or double heterojunction 9

 

2 Magnetoresistance Oscillations 21

2.1 Single heterojunction 22

2.2 Double quantum well 24

2.3 Wide single quantum well 28

 

3 Plasmons 33

3.1 Plasmons in single quantum wells 33

3.1.1 Subband structure 34

3.1.2 Collective excitations 35

3.1.3 Plasmon dispersions 40

3.2 Plasmons in double quantum wells 48

3.2.1 Plasmons in double quantum wells in the absence of a magnetic field 48

3.2.2 Plasmons in double quantum wells under in-plane magnetic field 52

 

4 Photoluminescence 59

4.1 Photoluminescence of double quantum wells under in-plane magnetic field 59

4.1.1 Theoretical studies 60

4.1.2 Experimental studies 75

4.1.3 Indirect excitons in double quantum wells under high in-plane magnetic fields 86

 

5 Diluted Magnetic Semiconductor QuantumWells:

Thermodynamics and Spin-Subband Structure 95

5.1 Basics 95

5.2 Spin splitting of two subsystems: itinerant carriers and magnetic ions 99

5.3 Low-temperature thermodynamics and spin-subband structure of narrow to wide diluted magnetic semiconductor quantum wells 100

 

6 Diluted Magnetic Semiconductor QuantumWells: Influence of Temperature, Magnetic Field, Carrier Concentration and Exchange Interaction 111

6.1 Multi-spin-subbband populations, spin-polarization, and

relative influence of the Zeeman and the exchange term 113

6.2 Wide quantum wells 116

6.2.1 Multi-spin-subband structure, spin-subband populations, and spin-polarization varying the sheet carrier concentration and the exchange interaction 119

6.2.2 Temperature dependence 123

 

7 Orbital Thermodynamic Properties 129

7.1 Low temperatures 129

7.2 Augmenting temperature 135

 

8 A Quasi Zero-Dimensional Case: Quantum Dots Under Magnetic Field of Variable Orientation 139

8.1 The theoretical framework 141

8.1.1 Single-particle states 141

8.1.2 Coulomb matrix elements 142

8.1.3 Excitonic problem 143

8.1.4 Near-field absorption spectra - spatial resolution 143

8.2 Application to single and double quantum dots 144

8.2.1 Single-particle states of single quantum dots: Spatial confinement vs. magnetic field orientation and magnitude 144

8.2.2 Single quantum dot in ideal configuration: The influence of the Coulomb interaction 147

8.2.3 Single quantum dots subjected to higher magnetic fields 151

8.2.4 Double quantum dot with a soft barrier 155

8.2.5 Ground state exciton binding 156

 

Bibliography 159

 

 

B1)   INVITED CHAPTER in the BOOK:

"Quantum Wells: Theory, Fabrication and Applications",

Nova Science Publishers, New York (www.novapublishers.com).


Editors: Alfred Ruyter and Harper O'Mahoney,

Pub. Date: 2009, Pages: pp.540

Binding: Hardcover, ISBN: 978-1-60692-557-7

Binding: ebook, ISBN: 978-1-61470-723-3


Chapter title:Quantum wells under in-plane magnetic field: Density of states and novel phenomena in thermodynamic properties, magnetization and spin-polarization.” Pages 37.

Author: C. Simserides*

 

Table of Contents:

-         Preface

-         Photodectors Based on Quantum-Well Structures: Theory, Properties and Novel Concepts (Carlos Rivera, ISOM and Dpto. Ingeneria Electronica, ETSI de Telecommunicacion, Univ. Politecnica de Madrid, Ciudad Univ., Madrid, Spain)

-         Recent Developments of PbSe-Based IV-VI Semiconductor Quantum Well Structures (Shaibal Mukherjee, Shelly L. Elizondo, Lee A. Elizondo, Zhisheng Shi, Univ. of Oklahoma, Norman, OK)

-         Coupled Quantum Well Structures (LiLi Yang, Q.X. Zhao, and M. Willander, Dept. of Science and Technology (ITN), Campus Norrkoping, Linkoping Univ., Norrkoping, Sweden)

-         Collective Electronic Excitations in Systems Exhibiting Quantum Well States (Antonio Politano, Univ. degli Studi della Calabria, Dipartimento di Fisica, Rende, Italy)

-         Magneto-Optical Study of Semimagnetic Single and Double Quantum Well Structures based on Cd(Mn)Se/CdMgSe Material System (I.I. Reshina, S.V. Ivanov, Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia)

-         Optical Gain in InGaAsN Quantum Well Structures. Summary of Various Approaches (M.S. Wartak, Dept. of Physics and Computer Science, Wilfrid Laurier Univ., Waterloo, Ontario, Canada)

-         Magnetoexciton Dispersion in GaAs - (Ga, Al) As Single and Coupled Quantum Wells (Z.G. Koinov, St. Petersburg Electrotechnical University, Russia)

-         Bonding and Antibonding States in Natural Molecules and Double Quantum Wells (R. Gutierrez, Centro de Investigaciones, A. Castaneda, Centro de Investigaciones, Dept. de Fisica, Univ. Antonio Narino, Bogota, Colombia)

-         Spin Slitting in Modulation-Doped Semiconductor Quantum Wells (U. Ekenberg and D.M. Gvozdi, School of Information and Communication Technology, Royal Institute of Technology, Kista, Sweden, Faculty of Electrical Engineering, Univ. of Belgrade, Belgrade, Serbia)

-         Infinite Quantum Well: On the Quantization Problem (P. L. Garcia de Leon, J. P. Gazeau, D. Gitman and J. Queva, (Laboratoire Astroparticules et Cosmologie, Universite Paris Diderot Paris, Paris Cedex 13 France, Universite Paris Est - Institut Gaspard Monge (IGM-LabInfo)y, 5 Bd. Descartes, Champs-sur-Marne, Marne-la-Vallee Cedex 2, France, Instituto de Fisica, Universidade de Sao Paulo, Caixa Postal Sao Paulo, SP, Brazil)

-         Elementary Excitations in Artificially Disordered Electron Systems: Random Multi-layers (Yu A. Pusep, Instituto de Fisica de Sao Carlos, Univ. de Sao Paulo, Carlos, SP, Brazil)

-         Quantum Wells Under In-Plane Magnetic Field: Density of States and Novel Phenomena in Thermodynamic Properties, Magnetization and Spin-Polarization (Constantinos Simserides, Institute of Materials Science, National Center of Scientific Research Demokritos, Athens, Greece)

-         Short Communication: Effects of Weak Magnetic Field on Rashba Spin Orbit Interaction in Spin Dependent Resonant Transmission in A ZeSe/Zn1-xMnxSe Heterostructure (A. John Peter, Govt. Arts College, Melur, India)



C11)Spin-polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states”

C. Simserides*

Journal of Physics: Conference Series 10 (2005) 143–146 (with referee)

doi: 10.1088/1742-6596/10/1/035

Proceedings of the 2nd Conf. on Microelectronics, Microsystems and Nanotechnology 2004


C10)Temperature dependent magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states”

         C. Simserides*

         AIP Conf. Proc. 772 (2005) 341-342     doi: 10.1063/1.1994128

         ICPS27 (27th International Conference on the Physics of Semiconductors) proceedings published by AIP


C7)   “Magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells

          with non-step-like density of states”

         C. Simserides*

         International Journal of Modern Physics B 18 (2004) 3745-3748 (with referee)

         doi: 10.1142/S0217979204027384

         Proceedings of SEMIMAG16 (16th Internat. Conference on High Magnetic Fields in Semiconductor Physics)


C3)   “Conduction band narrow to wide Diluted Magnetic Semiconductor layers under in-plane magnetic field: not step-like Density of States and consequences”

         C. Simserides*

         Proceedings of MSS11 (2003) p.299 (booklet version)

         (11th International Conference on Modulated Semiconductor Structures, Nara, Japan, 14-18 July 2003)




D6)  V. Piazza, C.D. Simserides, W. Wegscheider and F. Beltram: “Changing the density of states and the magnetoresistance of double heterojunctions by an in-plane magnetic field”, Advanced Materials for Industrial Applications. International summer school organized by the Physics Dept. of the Aristotle University of Thessaloniki, Kavala (20-27/6/1999)




Some talks and posters follow:
Talk: “Two-dimensional carriers under in-plane magnetic field: novel phenomena

NN09 Simserides TALK 13 JULY 2009



Talk: "Spin-polarization and magnetization of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states"

SIMSERIDES 17 NOV 2004 TALK MMN2004


Poster: " Temperature dependent magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states"

SIMSERIDES ICPS27 POSTER


Poster: "Magnetization and magnetic phases of conduction-band dilute-magnetic-semiconductor quantum wells with non-step-like density of states"

SIMSERIDES SEMIMAG16 POSTER



Electronic states, mobility and conductivity of quasi two-dimensional carriers – multi-subband scattering.



Ph.D. Thesis in Physics, Physics Department, University of Athens, 29 April 1996.

Thesis: "Electronic properties and mobility of selectively doped heterostructures

AlxGa1-xAs/GaAs/AlxGa1-xAs"

Cited in 2 PhD Theses.

Δείτε την στο Εθνικό Αρχείο Διδακτορικών Διατριβών (Σιμσερίδης)

Have a look at it in the National Archive of Ph.D. Theses (Σιμσερίδης)



A6)  “Electron scattering by optical phonons in AlxGa1–xAs/GaAs/AlxGa1–xAs quantum wells”

         X. Zianni, C. D. Simserides  and  G. P. Triberis

         Phys. Rev. B  55 (1997) 16324-16330     doi: 10.1103/PhysRevB.55.16324                                            


A5)  “Looking for the maximum low-temperature conductivity in selectively-doped AlxGa1-xAs-GaAs-AlxGa1-xAs  double heterojunctions”

         C. D. Simserides and G. P. Triberis

         J. Phys.: Condens. Matter 8 (1996) L421-L426     doi: 10.1088/0953-8984/8/30/002   


A4)  “A study on the temperature dependence of the quasi-two-dimensional electron concentration and mobility in AlxGa1-xAs/GaAs selectively doped heterostructures”

         C. D. Simserides and G. P. Triberis

         J. Phys.: Condens. Matter 7 (1995) 6317-6326     doi: 10.1088/0953-8984/7/31/014    


A3)  “On the temperature dependence of the electronic states and the mobility in AlGaAs/GaAs heterostructures”

         C. D. Simserides and G. P. Triberis

         Superlattices and Microstructures 14 (1993) 277-282     doi: 10.1006/spmi.1993.1139

         Proceedings of ICSMM-7 (7th International Conference on Superlattices, Microstructures and Microdevices)


A2)  “Comments on the efficiency of Selectively-Doped Double-Heterojunction Structures”

         C. D. Simserides and G. P. Triberis

         Phys. Status Solidi B 184 (1994) K49-K52     doi: 10.1002/pssb.2221840234


A1)  “A systematic study of electronic states in n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs selectively-doped double-heterojunction structures”

         C. D. Simserides and G. P. Triberis,

         J. Phys.: Condens. Matter 5 (1993) 6437-6446     doi: 10.1088/0953-8984/5/35/009




C1)   “Electronic properties of n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs double heterojunctions”

         C. D. Simserides and G. P. Triberis

Proceedings of the 4th-ICFSI, World Scientific Publishing, London, England (1993) (4th International Conference on the Formation of Semiconductor Interfaces, 14-18/6/1993, Julich, Germany)





D1)  C. D. Simserides and G. P. Triberis: “A systematic study of electronic states in n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs selectively-doped double-heterojunction structures”, 9th Panhellenic Conference of Solid State Physics (ΙΧ ΠΣΦΣΚ), September 1993, Rio, Patra. Proceedings of the ΙΧ ΠΣΦΣΚ.

D2)  C. D. Simserides and G. P. Triberis: Interpretation of the temperature dependence of the sheet electron concentration n selectively doped single and double heterojunction structures”, 10th Panhellenic Conference of Solid State Physics, September 1994, Delfi. Proceedings of Χ ΠΣΦΣΚ.

D3)  C. D. Simserides, X. Zianni and G. P. Triberis:Systematic study of the electron mobility in selectively doped AlxGa1-xAs/GaAs double heterojunctions”, 11th Panhellenic Conference of Solid State Physics, September 1995, Xanthi. Proceedings of the ΧΙ ΠΣΦΣΚ.

D4)  X. Zianni, C. D. Simserides and G. P. Triberis: Study of the electron scattering by optical phonons in semiconductor heterostructures”, 11ο Panhellenic Conference of Solid State Physics, September 1995, Xanthi. Proceedings of the ΧΙ ΠΣΦΣΚ.

D5)  X. Zianni, C. D. Simserides and G. P. Triberis: Study of the electron scattering by optical phonons in semiconductor heterostructures in quantum wells”, 12th Panhellenic Conference of Solid State Physics, September 1996, Heraklion, Creta. Proceedings of the ΧΙΙ ΠΣΦΣΚ.